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Register a new userTransport and Capacitance properties of Charge Density Wave in few layer 2H-TaS2 Devices
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We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs.
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The charge density wave (CDW) state in van der Waals systems shows interesting scaling phenomena as the number of layers can significantly affect the CDW transition temperature, $T_{CDW}$. However, it is often difficult to use conventional methods to study the phase transition in these systems due to their small size and sensitivity to degradation. Degradation is an important parameter which has been shown to greatly influence the superconductivity in layered systems. Since the CDW state competes with the onset of superconductivity, it is expected that $T_{CDW}$ will also be affected by the degradation. Here, we probe the CDW phase transition by the mechanical resonances of suspended 2H-TaS2 and 2H-TaSe2 membranes and study the effect of disorder on the CDW state. Pristine flakes show the transition near the reported values of 75 K and 122 K respectively. We then study the effect of degradation on 2H-TaS2 which displays an enhancement of $T_{CDW}$ up to 129 K after degradation in ambient air. Finally, we study a sample with local degradation and observe that multiple phase transitions occur at 87 K, 103 K and 118 K with a hysteresis in temperature in the same membrane. The observed spatial variations in the Raman spectra suggest that variations in crystal structure cause domains with different transition temperatures which could result in the hysteresis. This work shows the potential of using nanomechanical resonance to characterize the CDW in suspended 2D materials and demonstrate that degradation can have a large effect on transition temperatures.
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.
Here we report a scanning tunneling microscopy (STM) and spectroscopy (STS) study in the superconducting state of 2H-NbS2. We directly visualize the existence of incommensurate charge density wave (CDW) that is pinned by atomic impurities. In strong tunneling conditions, the incommensurate CDW is de-pinned from impurities by the electric field from STM tip. We perform STM-based inelastic tunneling spectroscopy (IETS) to detect phonon excitations in 2H-NbS2 and measure the influence of atomic impurities on local phonon excitations. In comparison with the calculated vibrational density of states in 2H-NbS2, we find two branches of phonon excitations which correspond to the vibrations of Nb ions and S ions, and the strength of the local phonon excitations is insensitive to the atomic impurities. Our results demonstrate the coexistence of incommensurate CDW and superconductivity in 2H-NbS2, and open the way of detecting atomic-scale phonon excitations in transition metal dichalcogenides with STM-based IETS.
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics.
Plasmons in two-dimensional (2D) materials beyond graphene have recently gained much attention. However, the experimental investigation is limited due to the lack of suitable materials. Here, we experimentally demonstrate localized plasmons in a correlated 2D charge-density-wave (CDW) material: 2H-TaSe2. The plasmon resonance can cover a broad spectral range from the terahertz (40 {mu}m) to the telecom (1.55 {mu}m) region, which is further tunable by changing thickness and dielectric environments. The plasmon dispersion flattens at large wave vectors, resulted from the universal screening effect of interband transitions. More interestingly, anomalous temperature dependence of plasmon resonances associated with CDW excitations is observed. In the CDW phase, the plasmon peak close to the CDW excitation frequency becomes wider and asymmetric, mimicking two coupled oscillators. Our study not only reveals the universal role of the intrinsic screening on 2D plasmons, but also opens an avenue for tunable plasmons in 2D correlated materials.
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