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Register a new userEnhancement of Transition Temperature in FexSe0.5Te0.5 Film via Iron Vacancies
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The effects of iron deficiency in FexSe0.5Te0.5 thin films (0.8<x<1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21K was observed in the most Fe deficient film (x=0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.
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In this study, we investigated the gate voltage dependence of $T_{mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{mathrm c}^{mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
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Temperature (12K $le$ T $le$ 300K) dependent extended X-ray absorption fine structure (EXAFS) studies at the Fe K edge in FeSe$_{1-x}$Te$_x$ (x = 0, 0.5 and 1.0) compounds have been carried out to understand the reasons for increase in T$_C$ upon Te doping in FeSe. While local distortions are present near superconducting onset in FeSe and FeSe$_{0.5}$Te$_{0.5}$, they seem to be absent in non superconducting FeTe. Of crucial importance is the variation of anion height. In FeSe$_{0.5}$Te$_{0.5}$, near superconducting onset, the two heights, $h_{Fe-Se}$ and $h_{Fe-Te}$ show a nearly opposite behaviour. These changes indicate a possible correlation between Fe-chalcogen hybridization and the superconducting transition temperature in these Fe-chalcogenides.
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