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Register a new userShot Noise Induced by Nonequilibrium Spin Accumulation
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When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.
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When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aIcoth(frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.
We study the shot noise (nonequilibrium current fluctuation) associated with dynamic nuclear polarization in a nonequilibrium quantum wire (QW) fabricated in a two-dimensional electron gas. We observe that the spin-polarized conductance quantization of the QW in the integer quantum Hall regime collapses when the QW is voltage biased to be driven to nonequilibrium. By measuring the shot noise, we prove that the spin polarization of electrons in the QW is reduced to $sim 0.7$ instead of unity as a result of electron-nuclear spin-flip scattering. The result is supported by Knight shift measurements of the QW using resistively detected NMR.
Rashba effect describes how electrons moving in an electric field experience a momentum dependent magnetic field that couples to the electron angular momentum (spin). This physical phenomenon permits the generation of spin polarization from charge current (Edelstein effect), which leads to the buildup of spin accumulation. Spin accumulation due to Rashba Edelstein effect has been recently reported to be uniform and oriented in plane, which has been suggested for applications as spin filter device and efficient driving force for magnetization switching. Here, we report the X-ray spectroscopy characterization Rashba interface formed between nonmagnetic metal (Cu, Ag) and oxide (Bi$_{2}$O$_{3}$) at grazing incidence angles. We further discuss the generation of spin accumulation by injection of electrical current at these Rashba interfaces, and its optical detection by time resolved magneto optical Kerr effect. We provide details of our characterization which can be extended to other Rashba type systems beyond those reported here.
Pt is known to show spontaneous formation of monatomic chains upon breaking a metallic contact. From model calculations, these chains are expected to be spin polarized. However, direct experimental evidence for or against magnetism is lacking. Here, we investigate shot noise as a potential source of information on the magnetic state of Pt atomic chains. We observe a remarkable structure in the distribution of measured shot-noise levels, where the data appear to be confined to the region of nonmagnetic states. While this suggests a nonmagnetic ground state for the Pt atomic chains, from calculations we find that the magnetism in Pt chains is due to actor electron channels, which contribute very little to ballistic conductance and noise. On the other hand, there are weakly polarized spectator channels, which carry most of the current and are only slightly modified by the magnetic state.
We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic electrodes. Our theory was developed using non-equilibrium Greens function method and general non-linear $S^sigma-V$ and $S^tau-V$ relations were derived as a function of angle $theta$ between magnetization of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that for the MNM system, the auto-correlation of spin current is enough to characterize the fluctuation of spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of spin current are needed to characterize the noise spectrum of spin current. Furthermore, the spin transfer torque and the torque noise were studied for the MNM system. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to $sintheta$ when the system is far away from the resonance. When the system is near the resonance, the spin transfer torque becomes non-sinusoidal function of $theta$. The derivative of noise spectrum of spin transfer torque with respect to the bias voltage $N_tau$ behaves differently when the system is near or far away from the resonance. Specifically, the differential shot noise of spin transfer torque $N_tau$ is a concave function of $theta$ near the resonance while it becomes convex function of $theta$ far away from resonance. For certain bias voltages, the period $N_tau(theta)$ becomes $pi$ instead of $2pi$. For small $theta$, it was found that the differential shot noise of spin transfer torque is very sensitive to the bias voltage and the other system parameters.
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