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Register a new userMagnetoresistance of disordered graphene: from low to high temperatures
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We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range $120-240$ K. The maximum is observed at intermediate magnetic fields ($B=2-6$ T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with $T$ and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.
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We present a magneto-transport study of graphene samples into which a mild disorder was introduced by exposure to ozone. Unlike the conductivity of pristine graphene, the conductivity of graphene samples exposed to ozone becomes very sensitive to temperature: it decreases by more than 3 orders of magnitude between 100K and 1K. By varying either an external gate voltage or temperature, we continuously tune the transport properties from the weak to the strong localization regime. We show that the transition occurs as the phase coherence length becomes comparable to the localization length. We also highlight the important role of disorder-enhanced electron-electron interaction on the resistivity.
We present a method to compute the magnetic susceptibility of spin systems at all temperatures in one and two dimensions. It relies on an approximation of the entropy versus energy (microcanonical potential function) on the whole range of energies. The intrinsic constraints on the entropy function and a careful treatment of boundary behaviors allow to extend the standard high temperature series expansions (HTE) towards zero temperature, overcoming the divergence of truncated HTE. This method is benchmarked against two one-dimensional solvable models: the Ising model in longitudinal field and the XY model in a transverse field. With ten terms in the HTE, we find a spin susceptibility within a few % of the exact results in the whole range of temperature. The method is then applied to two two-dimensional models: the supposed-to-be gapped Heisenberg model and the $J_1$-$J_2$-$J_d$ model on the kagome lattice.
We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance $[R(B)-R(0)]/R(0)$ amounts to $4000 B^2% $ at the Dirac point ($B$ in Tesla), with a quite weak temperature dependence below $30,$K. A decrease in the relative magnetoresistance by a factor of two is found when charge carrier density is increased to $|n| simeq 3 times 10^{-10}$ cm$^{-2}$. The gate dependence of the magnetoresistance allows us to characterize the role of scattering on long-range (Coulomb impurities, ripples) and short-range potential, as well as to separate the bulk resistance from the contact one. Furthermore, we find a shift in the position of the charge neutrality point with increasing magnetic field, which suggests that magnetic field changes the screening of Coulomb impurities around the Dirac point. The current noise of our device amounts to $10^{-23}$ A$^2$/$sqrt{textrm{Hz}}$ at $1,$kHz at $4,$K, which corresponds to a magnetic field sensitivity of $60$ nT/$sqrt{textrm{Hz}}$ in a background field of $0.15,$T.
We study the conductance of disordered graphene superlattices with short-range structural correlations. The system consists of electron- and hole-doped graphenes of various thicknesses, which fluctuate randomly around their mean value. The effect of the randomness on the probability of transmission through the system of various sizes is studied. We show that in a disordered superlattice the quasiparticle that approaches the barrier interface almost perpendicularly transmits through the system. The conductivity of the finite-size system is computed and shown that the conductance vanishes when the sample size becomes very large, whereas for some specific structures the conductance tends to a nonzero value in the thermodynamics limit.
We calculate the average single particle density of states in graphene with disorder due to impurity potentials. For unscreened short-ranged impurities, we use the non-self-consistent and self-consistent Born and $T$-matrix approximations to obtain the self-energy. Among these, only the self-consistent $T$-matrix approximation gives a non-zero density of states at the Dirac point. The density of states at the Dirac point is non-analytic in the impurity potential. For screened short-ranged and charged long-range impurity potentials, the density of states near the Dirac point typically increases in the presence of impurities, compared to that of the pure system.
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