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Representation of dielectric properties by impedance spectroscopy (IS) is analyzed carefully in this paper. It is found that IS is not a good tool to describe a uniform system because a pseudo relaxation peaks exists at low frequency limit corresponding to direct current (DC) conductivity and two relaxation peaks appears simultaneously corresponding to one relaxation process for a high loss system with tand>1. However it is very convenient to describe a multiple phase system with IS. When dielectric properties are shown by Cole-Cole equation, only one Cole-Cole arc appears for one phase in IS, therefore it is very easy to distinguish different phases from each other. Especially, since pseudo relaxation exists at low frequency limit for each phase, the location of a certain relaxation process can be deduced by IS without any uncertainty. Furthermore, when dielectric properties are shown with specific impedance spectroscopy (ISI), the information of microstructure can be obtained conveniently. Based on the theoretical results above, dielectric properties of CaCu3Ti4O12 (CCTO) ceramics with giant dielectric constant (GDC) are investigated. Microstructure of CCTO is obtained by dielectric spectrometer and the origin of GDC is found to come from pseudo relaxation of grain.
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Angle-resolved photoemission spectroscopy (ARPES), an experimental technique based on the photoelectric effect, is arguably the most powerful method for probing the electronic structure of solids. The past decade has witnessed notable progress in ARPES, including the rapid development of soft-X-ray ARPES, time-resolved ARPES, spin-resolved ARPES and spatially resolved ARPES, as well as considerable improvements in energy and momentum resolution. Consequently , ARPES has emerged as an indispensable experimental probe in the study of topological materials, which have characteristic non-trivial bulk and surface electronic structures that can be directly detected by ARPES. Over the past few years, ARPES has had a crucial role in several landmark discoveries in topological materials, including the identification of topological insulators and topological Dirac and Weyl semimetals. In this Technical Review , we assess the latest developments in different ARPES techniques and illustrate the capabilities of these techniques with applications in the study of topological materials.
Multiferroic bismuth ferrite Bi_2Fe_4O_9 (BFO) ceramic was synthesized by conventional solid state reaction route. X-ray diffraction and Rietveld refinement show formation of single phase ceramic with orthorhombic crystal structure (space group Pbam). The morphological study depicted a well-defined grain of size $simeq$2{mu}m. The optical studies were carried out by using UV-Vis spectrophotometer which shows a band gap of 1.53 eV and a green emission spectrum at 537 is observed in the Photoluminescence study. The frequency dependent dielectric study at various temperature revealed that the dielectric constant decreases with increase in frequency. A noticeable peak shift towards higher frequency with increasing temperature is observed in the frequency dependent dielectric loss plot. The impedance spectroscopy shows a substantial shift in imaginary impedance (Z) peaks toward the high frequency side described that the conduction in material favoring the long range motion of mobile charge carriers. The presence of non-Debye type multiple relaxations has been confirmed by complex modulus analysis. The frequency dependent ac conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of dc conductivity exhibited a negative temperature coefficient of resistance behavior. The activation energy calculated from impedance, modulus and conductivity data confirmed that the oxygen vacancies play a vital role in the conduction mechanism.
Magneto-impedance (MI) effects have been observed for amorphous Fe73.5Nb3Cu1Si13.5B9 ribbon which has been excited by an a.c. magnetic field parallel to the length of the ribbon. Maximum relative change in MI as large as -99% was observed which has never been reported before. The relative change in MI, when plotted against scaled field was found to be nearly frequency independent. A phenomenological formula for magneto-impedance, Z(H), in a ferromagnetic material, is proposed based on Pade approximant to describe the scaled behavior of MI.
Dielectric response and conduction mechanism were investigated for a multiferroic BiFe$_{0.95}$Mn$_{0.05}$O$_3$ epitaxial thin film. A contribution from a thermally activated interface (0.37 eV) and the bulk of the film on the dielectric response were observed through the comparison between experimental results and equivalent circuit model. The low frequency interface relaxation signatures strongly suggest a Maxwell-Wagner space charge origin. The alternative current conductivity deduced from the model follows a power law frequency dependence suggesting a polaronic hopping mechanism while the low frequency limit is in perfect agreement with the direct current conduction mechanism. The current-voltage characteristics were indeed correlated with Schottky-Simmons interface limited transport with activation energy of 0.36 eV, close to the one extracted from the impedance analysis. Such analysis of the electrostatic landscape and dielectric behaviour may help to further understanding the anomalous photo-induced properties in the BiFeO$_3$ system.
We present a general method to unfold energy bands of supercell calculations to primitive Brillouin zone using group theoretical techniques, where an isomorphic factor group is introduced to connect the primitive translation group with the supercell translation group via a direct product. Originating from the translation group symmetry, our method gives an uniform description of unfolding approaches based on various basis sets, and therefore, should be easy to implement in both tight-binding model and existing ab initio code packages using different basis sets. This makes the method applicable to a variety of problems involving the use of supercells, such as defects, disorder, and interfacial reconstructions. As a realistic example, we calculate electronic properties of an monolayer FeSe on SrTiO$_3$ in checkerboard and collinear antiferromagnetic spin configurations, illustrating the potential of our method.
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