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Register a new userThe Effect of Cesium Carbonate on PCBM Aggregation in Films
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Surface-pressure isotherms, X-ray reflectivity and X-ray near-total reflection fluorescence were used to study the properties of 1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C$_{61}$ (PCBM) that was pre-mixed with cesium carbonate and spread as a film at the air-water interface. The pre-mixed PCBM with cesium carbonate demonstrated a strikingly strong effect on the organization of the film. Whereas films formed from pure PCBM solution were rough due to strong inter-molecular interactions, the films formed from the mixture were much smoother. This indicates that the cesium carbonate moderates the inter-molecular interactions among PCBM molecules, hinting that the cesium diffusion observed in inverted organic photovoltaics and the likely ensuing ionic Cs-PCBM interaction decreases aggregation tendency of PCBM. This implies that the use of cesium salts affects the morphology of the organic layer and consequently improves the efficiency of these devices.
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Calcium carbonate is a model system to investigate the mechanism of solid formation by precipitation from solutions, and it is often considered in the debated classical and non-classical nucleation mechanism. Despite the great scientific relevance of calcium carbonate in different areas of science, little is known about the early stage of its formation. We, therefore, designed contactless devices capable to provide informative investigations on the early stages of the precipitation pathway of calcium carbonate in supersaturated solutions using classical scattering methods such as Wide-Angle X-ray Scattering (WAXS) and Small-Angle X-ray Scattering (SAXS) techniques. In particular, SAXS was exploited for investigating the size of entities formed from supersaturated solutions before the critical conditions for amorphous calcium carbonate (ACC) nucleation are attained. The saturation level was controlled by mixing four diluted solutions (i.e., NaOH, CaCl2, NaHCO3, H2O) at constant T and pH. The scattering data were collected on a liquid jet generated about 75 sec after the mixing point. The data were modeled using parametric statistical models providing insight about the size distribution of denser matter in the liquid jet. Theoretical implications on the early stage of solid formation pathway are inferred.
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.
The unique properties of organic semiconductors make them versatile base materials for many applications ranging from light emitting diodes to transistors. The low spin-orbit coupling typical for carbon-based materials and the resulting long spin lifetimes give rise to a large influence of the electron spin on charge transport which can be exploited in spintronic devices or to improve solar cell efficiencies. Magnetic resonance techniques are particularly helpful to elucidate the microscopic structure of paramagnetic states in semiconductors as well as the transport processes they are involved in. However, in organic devices the nature of the dominant spin-dependent processes is still subject to considerable debate. Using multi-frequency pulsed electrically detected magnetic resonance (pEDMR), we show that the spin-dependent response of P3HT/PCBM solar cells at low temperatures is governed by bipolar polaron pair recombination involving the positive and negative polarons in P3HT and PCBM, respectively, thus excluding a unipolar bipolaron formation as the main contribution to the spin-dependent charge transfer in this temperature regime. Moreover the polaron-polaron coupling strength and the recombination times of polaron pairs with parallel and antiparallel spins are determined. Our results demonstrate that the pEDMR pulse sequences recently developed for inorganic semiconductor devices can very successfully be transferred to the study of spin and charge transport in organic semiconductors, in particular when the different polarons can be distinguished spectrally.
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due to a small 1% tetragonal elongation induced by substrate strain. The main change on annealing is a modification in the compensation temperature, which first increases from 50 K for the as-deposited film to 185 K after annealing at 250 degree Celsius, and then falls to 140 K after annealing at 400 degree Celsius. There are minor changes in the atomic order, coercivity, resistivity and anomalous Hall effect (AHE), but the net magnetization measured by SQUID magnetometry with the field applied in-plane or perpendicular-to-the-plane changes more significantly. It saturates at 20 to 30 kA/m at room temperature, and a small soft component is seen in the perpendicular SQUID loops which is absent in the square AHE hysteresis loops. This is explained by the half-metallic nature of the compound; the AHE probes only the 4c Mn sublattice that provides the spin-polarized electrons at the Fermi level, whereas the SQUID measures the sum of the oppositely-aligned 4c and 4a sublattice magnetisations.
We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the presence of the strain. In comparison to the bulk antiferromagnetic order, the as-deposited film has been found to exhibit ferrimagnetic ordering with a coercive field of 1140~Oe at 5~K. A broad maximum, at $approx$105~K, observed in zero-field cooled magnetization curve indicates the wide grain size distribution for the as-deposited film. Reduction in magnetization and blocking temperature has been observed after annealing in both argon as well as oxygen atmospheres, where the variation was found to be dependent on the annealing temperature.
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