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Register a new userNonlinear transport and noise thermometry in quasi-classical ballistic point contacts
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We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system. This commonly accepted scenario breaks down at increasing $V$, where we observe extra noise accompanied by a strong decrease of the PCs differential resistance. The spectral density of the extra noise is roughly proportional to the nonlinear current contribution in the PC $delta Sapprox2F^*|edelta I|sim V^2$ with the effective Fano factor $F^*<1$, indicating that a random scattering process is involved. A small perpendicular magnetic field is found to suppress both $delta I$ and $delta S$. Our observations are consistent with a concept of a drag-like mechanism of the nonlinear transport mediated by electron-electron scattering in the leads of quasi-classical PCs.
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Linear and non-linear transport properties through an atomic-size point contact based on oxides two-dimensional electron gas is examined using the tight-binding method and the $mathbf{kcdot p}$ approach. The ballistic transport is analyzed in contacts realized at the (001) interface between band insulators $LaAlO_3$ and $SrTiO_3$ by using the Landauer-Buttiker method for many sub-bands derived from three Ti 3d orbitals ($d_{yz}$, $d_{zx}$ and $d_{xy}$) in the presence of an out-of-plane magnetic field. We focus especially on the role played by the atomic spin-orbit coupling and the inversion symmetry breaking term pointing out three transport regimes: the first, at low energies, involving the first $d_{xy}$-like sub-bands, where the conductance quantization is robust; a second one, at intermediate energies, entailing further $d_{xy}$-like sub-bands, where the sub-band splitting induced by the magnetic field is quenched; the third one, where the mixing between light $d_{xy}$-like, heavy $d_{yz}$-like and $d_{zx}$-like sub-bands is so strong that the conductance plateaus turn out to be very narrow. Very good agreement is found with recent experiments exploring the transport properties at low energies.
Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.
We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus (where shot noise vanishes), agrees quantitatively with a model of bias-dependent electron heating.
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Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.
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