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Register a new userInverse spin Hall effect in a closed loop circuit
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We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.
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In an easy-plane antiferromagnet with the Dzyaloshinskii-Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarization, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally-driven spin polarization in an adjacent heavy metal with strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the Neel vector.
Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low SOC (elements of light weight) and large spin diffusion length make the organic semiconductors (OSCs) suitable for future spintronic applications. From theoretical model it is explained that, due to $pi$ - $sigma$ hybridization the curvature of the C$_{60}$ molecules may increase the SOC strength. Here, we have investigated spin pumping and inverse spin hall effect (ISHE) in CoFeB/C$_{60}$ bilayer system using coplanar wave guide based ferromagnetic resonance (CPW-FMR) set-up. We have performed angle dependent ISHE measurement to disentangle the spin rectification effects for example anisotropic magnetoresistance, anomalous Hall effect etc. Further, effective spin mixing conductance (g$_{eff}^{uparrowdownarrow}$) and spin Hall angle ($theta_{SH}$) for C$_{60}$ have been reported here. The evaluated value for $theta_{SH}$ is 0.055.
Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of self-induced ISHE in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumping-induced spin current in permalloy (Py) film generates a transverse electromotive force (EMF) in the film itself, which results from the coupling of spin current and SOI in Py. The control experiments ruled out spin rectification effect and anomalous Nernst effect as the origin of the EMF.
An intriguing feature of spintronics is the use of pure spin-currents to manipulate magnetization, e.g., spin-currents can switch magnetization in spin-torque MRAM, a next-generation DRAM alternative. Giant spin-currents via the spin Hall effect greatly expand the technological opportunities. Conversely, a ferromagnet/normal metal junction emits spin-currents under microwave excitation, i.e. spin-pumping. While such spin-currents are modulated at the excitation frequency, there is also a non-linear, rectified component that is commonly detected using the corresponding inverse spin Hall effect (iSHE) dc voltage. However, the ac component should be more conducive for quantitative analysis, as it is up to two orders of magnitude larger and linear. But any device that uses the ac iSHE is also sensitive to inductive signals via Faradays Law and discrimination of the ac iSHE signal must rely on phase-sensitive measurements. We use the inductive signal as a reference for a quantitative measurement of the magnitude and phase of the ac iSHE.
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in (In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect - a phenomenon that governs interconversion between spin and charge currents - in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.
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