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Register a new userQuantum spin Hall effect on germanene nanoroad embedded in a completely hydrogenated germanene
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We show that germanene nanoroads embedded in a completely hydrogenated germanene (germanane) exhibits a quantum spin Hall effect (QSHE). These nanoroads can be obtained experimentally by local hydrogen dissociation from germanane. Using first principle calculations we predict that germanene nanoroads with zigzag interfaces show dissipationless conducting channels with in-plane and out-of-plane spin textures.
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Structural and superconducting transitions of layered van der Waals (vdW) hydrogenated germanene (GeH) were observed under high-pressure compression and decompression processes. GeH possesses a superconducting transition at critical temperature (Tc) of 5.41 K at 8.39 GPa. A crystalline to amorphous transition occurs at 16.80 GPa while superconductivity remains. An abnormally increased Tc up to 6.1 K has been observed in the decompression process while the GeH remained amorphous. Thorough in-situ high-pressure synchrotron X-ray diffraction and in-situ high-pressure Raman spectroscopy with the density functional theory simulations suggest that the superconductivity of GeH should be attributed to the increased density of states at the Fermi level as well as the enhanced electron-phonon coupling effect under high pressure. The decompression-driven superconductivity enhancement arises from pressure-induced phonon softening related to an in-plane Ge-Ge phonon mode. As an amorphous metal hydride superconductor, GeH provides a platform to study amorphous hydride superconductivity in layered vdW materials.
We report an unconventional quantum spin Hall phase in the monolayer T$_text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials.
The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hydrogenated graphene in the H-bar method and by direct measurements of the inverse SHE. Although a large nonlocal resistance can be observed in the H-bar structure, comparison with the results of the other method indicate that this nonlocal resistance is caused by a non-spin-related origin.
Dirac points in two-dimensional electronic structures are a source for topological electronic states due to the $pm pi$ Berry phase that they sustain. Here we show that two rutile multilayers (namely (WO$_2$)$_2$/(ZrO$_2$)$_n$ and (PtO$_2$)$_2$/(ZrO$_2$)$_n$, where an active bilayer is sandwiched by a thick enough (n=6 is sufficient) band insulating substrate, show semi-metallic Dirac dispersions with a total of four Dirac cones along the $Gamma-M$ direction. These become gapped upon the introduction of spin-orbit coupling, giving rise to an insulating ground state comprising four edge states. We discuss the origin of the lack of topological protection in terms of the valley spin-Chern numbers and the multiplicity of Dirac points. We show with a model Hamiltonian that mirror-symmetry breaking would be capable of creating a quantum phase transition to a strong topological insulator, with a single Kramers pair per edge.
We have investigated the growth of Pt on Ge(110) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(110) followed by annealing at 1100 K results in the formation of three-dimensional metallic Pt-Ge nanocrystals. The outermost layer of these crystals exhibits a honeycomb structure. The honeycomb structure is composed of two hexagonal sub-lattices that are displaced vertically by 0.2 {AA} with respect to each other. The nearest-neighbor distance of the atoms in the honeycomb lattice is 2.5${pm}$0.1 {AA}, i.e. very close to the predicted nearest-neighbor distance in germanene (2.4 {AA}). Scanning tunneling spectroscopy reveals that the atomic layer underneath the honeycomb layer is more metallic than the honeycomb layer itself. These observations are in line with a model recently proposed for metal di-(silicides/)germanides: a hexagonal crystal with metal layers separated by semiconductor layers with a honeycomb lattice. Based on our observations we propose that the outermost layer of the Ge2Pt nanocrystal is a germanene layer.
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