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Register a new userPatterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers
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A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
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A cavity-polariton, formed due to the strong coupling between exciton and cavity mode, is one of the most promising composite bosons for realizing macroscopic spontaneous coherence at high temperature. Up to date, most of polariton quantum degeneracy experiments were conducted in the complicated two-dimensional (2D) planar microcavities. The role of dimensionality in coherent quantum degeneracy of a composite bosonic system of exciton polaritons remains mysterious. Here we report the first experimental observation of a one-dimensional (1D) polariton condensate in a ZnO microwire at room temperature. The massive occupation of the polariton ground state above a distinct pump power threshold is clearly demonstrated by using the angular resolved spectroscopy under non-resonant excitation. The power threshold is one order of magnitude lower than that of Mott transition. Furthermore, a well-defined far field emission pattern from the polariton condensate mode is observed, manifesting the coherence build-up in the condensed polariton system.
Interacting Bosons, loaded in artificial lattices, have emerged as a modern platform to explore collective manybody phenomena, quantum phase transitions and exotic phases of matter as well as to enable advanced on chip simulators. Such experiments strongly rely on well-defined shaping the potential landscape of the Bosons, respectively Bosonic quasi-particles, and have been restricted to cryogenic, or even ultra-cold temperatures. On chip, the GaAs-based exciton-polariton platform emerged as a promising system to implement and study bosonic non-linear systems in lattices, yet demanding cryogenic temperatures. In our work, we discuss the first experiment conducted on a polaritonic lattice at ambient conditions: We utilize fluorescent proteins as an excitonic gain material, providing ultra-stable Frenkel excitons. We directly take advantage of their soft nature by mechanically shaping them in the photonic one-dimensional lattice. We demonstrate controlled loading of the condensate in distinct orbital lattice modes of different symmetries, and finally explore, as an illustrative example, the formation of a gap solitonic mode, driven by the interplay of effective interaction and negative effective mass in our lattice. The observed phenomena in our open dissipative system are comprehensively scrutinized by a nonequilibrium model of polariton condensation. We believe, that this work is establishing the organic polariton platform as a serious contender to the well-established GaAs platform for a wide range of applications relying on coherent Bosons in lattices, given its unprecedented flexibility, cost effectiveness and operation temperature.
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.
Interacting bosonic particles in artificial lattices have proven to be a powerful tool for the investigation of exotic phases of matter as well as phenomena resulting from non-trivial topology. Exciton-polaritons, bosonic quasi-particles of light and matter, have shown to combine the on-chip benefits of optical systems with strong interactions, inherited form their matter character. Technologically significant semiconductor platforms, however, strictly require cryogenic temperatures for operability. In this paper, we demonstrate exciton-polariton lasing for topological defects emerging form the imprinted lattice structure at room temperature. We utilize a monomeric red fluorescent protein derived from DsRed of Discosoma sea anemones, hosting highly stable Frenkel excitons. Using a patterned mirror cavity, we tune the lattice potential landscape of a linear Su-Schrieffer-Heeger chain to design topological defects at domain boundaries and at the edge. In spectroscopic experiments, we unequivocally demonstrate polariton lasing from these topological defects. This progress promises to be a paradigm shift, paving the road to interacting Boson many-body physics at ambient conditions.
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called WM well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.
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