No Arabic abstract
We demonstrate lasing mode selection in nearly circular semiconductor microdisks by shaping the spatial profile of optical pump. Despite of strong mode overlap, adaptive pumping suppresses all lasing modes except the targeted one. Due to slight deformation of the cavity shape and boundary roughness, each lasing mode has distinct emission pattern. By selecting different mode to be the dominant lasing mode, we can switch both the lasing frequency and the output direction. Such tunability by external pump after the laser is fabricated enhances the functionality of semiconductor microcavity lasers.
We report single-mode lasing in subwavelength GaAs disks under optical pumping. The disks are fabricated by standard photolithography and two steps of wet chemical etching. The simple fabrication method can produce submicron disks with good circularity, smooth boundary and vertical sidewalls. The smallest lasing disks have a diameter of 627 nm and thickness of 265 nm. The ratio of the disk diameter to the vacuum lasing wavelength is about 0.7. Our numerical simulations confirm that the lasing modes are whispering-gallery modes with the azimuthal number as small as 4 and very small mode volume.
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 {mu}W and a conversion efficiency of 3.1{times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
Forward and backward THz emission by ionizing two-color laser pulses in gas is investigated by means of a simple semi-analytical model based on Jefimenkos equation and rigorous Maxwell simulations in one and two dimensions. We find the emission in backward direction having a much smaller spectral bandwidth than in forward direction and explain this by interference effects. Forward THz radiation is generated predominantly at the ionization front and thus almost not affected by the opacity of the plasma, in excellent agreement with results obtained from a unidirectional pulse propagation model.
Directional excitation of guidance modes is central to many applications ranging from light harvesting, optical information processing to quantum optical technology. Of paramount interest, especially, the active control of near-field directionality provides a new paradigm for the real-time on-chip manipulation of light. Here we find that for a given dipolar source, its near-field directionality can be toggled efficiently via tailoring the polarization of surface waves that are excited, for example, via tuning the chemical potential of graphene in a graphene-metasurface waveguide. This finding enables a feasible scheme for the active near-field directionality. Counterintuitively, we reveal that this scheme can transform a circular electric/magnetic dipole into a Huygens dipole in the near-field coupling. Moreover, for Janus dipoles, this scheme enables us to actively flip their near-field coupling and non-coupling faces.
We experimentally demonstrate the existence of non dispersive solitary waves associated with a 2$pi$ phase rotation in a strongly multimode ring semiconductor laser with coherent forcing. Similarly to Bloch domain walls, such structures host a chiral charge. The numerical simulations based on a set of effective Maxwell-Bloch equations support the experimental evidence that only one sign of chiral charge is stable, which strongly affects the motion of the phase solitons. Furthermore, the reduction of the model to a modified Ginzburg Landau equation with forcing demonstrates the generality of these phenomena and exposes the impact of the lack of parity symmetry in propagative optical systems.