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Study of Tracking and Flavor Tagging with FPCCD Vertex Detector

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 Added by Tatsuya Mori
 Publication date 2014
  fields Physics
and research's language is English




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One of the major physics goals at the ILC is the precise measurement of the Higgs coupling constants to b-quarks and c-quarks. To achieve this measurement, we need a high-performance vertex detector leading to precise flavor tagging. For this purpose, we are developing the Fine Pixel CCD (FPCCD) vertex detector. In this paper, we will report on the development status of FPCCDTrackFinder, a new track finder improving tracking efficiency, especially in the low $p_t$ region, and an evaluation result of the flavor tagging performance with FPCCDTrackFinder in the FPCCD vertex detector.



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We are developing the vertex detector with a fine pixel CCD (FPCCD) for the international linear collider (ILC), whose pixel size is $5 times 5$ $mu$m$^{2}$. To evaluate the performance of the FPCCD vertex detector and optimize its design, development of the software dedicated for the FPCCD is necessary. We, therefore, started to develop the software for FPCCD. In this article, the status of the study is reported.
One of candidates for the International Linear Collider(ILC)s vertex detector is the Fine Pixel CCD (FPCCD) with a pixel size of 5 times 5 (mum^2). Sensor and readout systems are currently being studied and prototypes have been developed. In this paper we will report on the performance of latest developed readout ASIC prototype as well as the outline of the design strategy for the next ASIC prototype.
Fine pixel CCD (FPCCD) is one of the candidate sensor technologies for the vertex detector used for experiments at the International Linear Collider (ILC). FPCCD vertex detector is supposed to be cooled down to -40 degree for improvement of radiation immunity. For this purpose, a two-phase CO2 cooling system using a gas compressor for CO2 circulation is being developed at KEK. The status of this R&D is presented in this article.
In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6 $mu$m. The measured charge collection characterstics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current-voltage characteristics of the device, and have been further used to make predictions about future device designs.
An upgraded asymmetric e+e- flavor factory, SuperKEKB, is planned at KEK. It will deliver a luminosity of 8 x 10^35 cm^-2 s^-1, allowing precision measurements in the flavor sector which can probe new physics well beyond the scales accessible to direct observation. The increased luminosity also requires upgrades of the Belle detector. Of critical importance here is a new silicon pixel vertex tracker, which will significantly improve the decay vertex resolution. This new detector will consist of two detector layers close to the interaction point, using DEPFET pixel sensors with 50 um thick silicon in the active area.
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