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Register a new userCryogenic silicon surface ion trap
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Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $dot{bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.
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Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, which would enable higher simulated coupling rates, as well as interactions based on magnetic forces generated by on-chip currents. Working in an 11 K cryogenic environment, we experimentally verify to within 5% a numerical model of the structure of ion crystals in the trap. We also explore the possibility of implementing quantum simulation using magnetic forces, and calculate J-coupling rates on the order of 10^3 / s for an ion crystal height of 10 microns, using a current of 1 A.
We describe the design, fabrication, and operation of a novel surface-electrode Paul trap that produces a radio-frequency-null along the axis perpendicular to the trap surface. This arrangement enables control of the vertical trapping potential and consequentially the ion-electrode distance via dc-electrodes only. We demonstrate confinement of single $^{40}$Ca$^+$ ions at heights between $50~mu$m and $300~mu$m above planar copper-coated aluminium electrodes. We investigate micromotion in the vertical direction and show cooling of both the planar and vertical motional modes into the ground state. This trap architecture provides a platform for precision electric-field noise detection, trapping of vertical ion strings without excess micromotion, and may have applications for scalable quantum computers with surface ion traps.
The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.
A novel approach to optics integration in ion traps is demonstrated based on a surface electrode ion trap that is microfabricated on top of a dielectric mirror. Additional optical losses due to fabrication are found to be as low as 80 ppm for light at 422 nm. The integrated mirror is used to demonstrate light collection from, and imaging of, a single 88 Sr+ ion trapped $169pm4 mu$m above the mirror.
We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably measure heating in this range, we compare the experimental sideband envelope, including up to fourth-order sidebands, to a theoretical model. The sideband envelope method allows us to cover the intermediate heating range inaccessible to the first-order sideband and Doppler recooling methods. We conclude that quantum information processing in this ion trap will likely require sympathetic cooling in order to support high fidelity gates after junction transport.
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