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Register a new userSpontaneous emission in a silicon charge qubit
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The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge states response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.
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Persistent control of a transmon qubit is performed by a feedback protocol based on continuous heterodyne measurement of its fluorescence. By driving the qubit and cavity with microwave signals whose amplitudes depend linearly on the instantaneous values of the quadratures of the measured fluorescence field, we show that it is possible to stabilize permanently the qubit in any targeted state. Using a Josephson mixer as a phase-preserving amplifier, it was possible to reach a total measurement efficiency $eta$=35%, leading to a maximum of 59% of excitation and 44% of coherence for the stabilized states. The experiment demonstrates multiple-input multiple-output analog Markovian feedback in the quantum regime.
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