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Register a new userStrongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond
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Added by
Jingyuan Linda Zhang
Publication date
2017
fields
Physics
and research's language is
English
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Quantum emitters are an integral component for a broad range of quantum technologies including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single photon generation and photon mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime where the excited state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest to date coupling strength ($g/2pi=4.9pm0.3 GHz$) and cooperativity ($C=1.4$) for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.
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We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Deltalambda/Delta T= 6.8,mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70,mathrm{mK}$ precision at room temperature with a sensitivity of $360,mathrm{mK/sqrt{Hz}}$. Finally, we use SiVs in $200,mathrm{nm}$ nanodiamonds as local temperature probes with $521,mathrm{ mK/sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems.
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
The spatial resolution and fluorescence signal amplitude in stimulated emission depletion (STED) microscopy is limited by the photostability of available fluorophores. Here, we show that negatively-charged silicon vacancy (SiV) centers in diamond are promising fluorophores for STED microscopy, owing to their photostable, near-infrared emission and favorable photophysical properties. A home-built pulsed STED microscope was used to image shallow implanted SiV centers in bulk diamond at room temperature. The SiV stimulated emission cross section for 765-800 nm light is found to be (4.0 +/- 0.3) x 10^(-17) cm^2, which is approximately 2-4 times larger than that of the negatively-charged diamond nitrogen vacancy center and approaches that of commonly-used organic dye molecules. We performed STED microscopy on isolated SiV centers and observed a lateral full-width-at-half-maximum spot size of 89 +/- 2 nm, limited by the low available STED laser pulse energy (0.4 nJ). For a pulse energy of 5 nJ, the resolution is expected to be ~20 nm. We show that the present microscope can resolve SiV centers separated by <150 nm that cannot be resolved by confocal microscopy.
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed.
We employ a fiber-based optical microcavity with high finesse to study the enhancement of phonon sideband fluorescence of nitrogen-vacancy centers in nanodiamonds. Harnessing the full tunability and open access of the resonator, we explicitly demonstrate the scaling laws of the Purcell enhancement by varying both the mode volume and the quality factor over a large range. While changes in the emission lifetime remain small in the regime of a broadband emitter, we observe an increase of the emission spectral density by up to a factor of 300. This gives a direct measure of the Purcell factor that could be achieved with this resonator and an emitter whose linewidth is narrower than the cavity linewidth. Our results show a method for the realization of wavelength-tunable narrow-band single-photon sources and demonstrate a system that has the potential to reach the strong-coupling regime.
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