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In electronic cooling with superconducting tunnel junctions, the cooling power is counterbalanced by the interaction with phonons and by the heat flow from the overheated leads. We study aluminium-based coolers that are equipped with a suspended normal metal and an efficient quasi-particle drain. At intermediate temperatures, the phonon bath of the suspended normal metal is cooled. At lower temperatures, by adjusting the junction transparency, we control the injection current, and thus the superconductor temperature. The device shows a strong cooling from 150 mK down to about 30 mK, a factor of five in temperature. We suggest that spatial non-uniformity in the superconductor gap limits the cooling toward lower temperatures.
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When biased at a voltage just below a superconductors energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focussed to structures of submicron size and consequently cooling power in the picoWatt range, we have led a thorough study of devices with a large cooling power up to the nanoWatt range. Here we describe how their performance can be optimized by using a quasi-particle drain and tuning the cooling junctions tunnel barrier.
Heat management and refrigeration are key concepts for nanoscale devices operating at cryogenic temperatures. The design of an on-chip mesoscopic refrigerator that works thanks to the input heat is presented, thus realizing a solid state implementation of the concept of cooling by heating. The system consists of a circuit featuring a thermoelectric element based on a ferromagnetic insulator-superconductor tunnel junction (N-FI-S) and a series of two normal metal-superconductor tunnel junctions (SINIS). The N-FI-S element converts the incoming heat in a thermovoltage, which is applied to the SINIS, thereby yielding cooling. The coolers performance is investigated as a function of the input heat current for different bath temperatures. We show that this system can efficiently employ the performance of SINIS refrigeration, with a substantial cooling of the normal metal island. Its scalability and simplicity in the design makes it a promising building block for low-temperature on-chip energy management applications.
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density of states, and also lead to efficient spin filtering if operated as tunnel barriers. The combination of spin splitting and spin filtering is shown to yield a substantial self-amplification of the electronic heat diode effect due to breaking of the electron-hole symmetry in the system which is added to the thermal asymmetry of the junction. Large spin splitting and large spin polarization can potentially lead to thermal rectification efficiency exceeding 5 .10^4 for realistic parameters in a suitable temperature range, thereby outperforming up to a factor of 250 the heat diode effect achievable with conventional superconducting tunnel junctions. These results could be relevant for improved mastering of the heat currents in innovative phase-coherent caloritronic nanodevices, and for enhanced thermal management of quantum circuits at the nanoscale.
We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on large ensembles of junctions which prove the reproducibility of the fabrication process. The measured tunnel resistance variance in large ensembles of identically fabricated junctions is in the range of only a few percents. Finally, we have studied the effect of different thermal treatments on the junction barrier. This is especially important for multiple step fabrication processes which imply annealing the junction.
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Delta_0 approx 200,mu {rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $delta T = 10,{rm mK}$ is achieved at a bath temperature $T_{bath}approx250-350,{rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.
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