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Register a new userEngineering spin-orbital magnetic insulator by tailoring superlattices
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Novel interplay of spin-orbit coupling and electron correlations in complex Ir oxides recently emerged as a new paradigm for correlated electron physics. Because of a large spin-orbit coupling of ~0.5 eV, which is comparable to the transfer energy t and the crystal field splitting $Delta$ and Coulomb U, a variety of ground states including magnetic insulator, band insulator, semimetal and metal, shows up in a narrow materials phase space. Utilizing such subtle competition of the ground states, we successfully tailor a spin-orbital magnetic insulator out of a semimetal SrIrO$_3$ by controlling dimensionality using superlattice of [(SrIrO$_3$)$_m$, SrTiO$_3$] and show that a magnetic ordering triggers the transition to magnetic insulator. Those results can be described well by a first-principles calculation. This study is an important step towards the design and the realization of topological phases in complex Ir oxides with very strong spin-orbit coupling.
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Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magnetic interactions and the resultant formation of topological magnetic phases, as the heterostructuring approach provides an accessible controllability to modulate the magnetic interactions. In this study, we have observed that the Hall effect of SrRuO3/SrTiO3 superlattices varies nonmonotonically with the repetition number (z). Using Monte Carlo simulations, we identify a possible origin of this experimental observation: the interplay between the Dzyaloshinskii-Moriya interaction and dipole-dipole interaction, which have differing z-dependence, might result in a z-dependent modulation of topological magnetic phases. This approach provides not only a collective understanding of the magnetic interactions in artificial heterostructures but also a facile control over the skyrmion phases.
We report a high-field electron spin resonance study in the sub-THz frequency domain of a single crystal of Sr$_2$IrO$_4$ that has been recently proposed as a prototypical spin-orbital Mott insulator. In the antiferromagnetically (AFM) ordered state with noncollinear spin structure that occurs in this material at $T_{rm N} approx 240$ K we observe both the low frequency mode due to the precession of weak ferromagnetic moments arising from a spin canting, and the high frequency modes due to the precession of the AFM sublattices. Surprisingly, the energy gap for the AFM excitations appears to be very small, amounting to 0.83 meV only. This suggests a rather isotropic Heisenberg dynamics of interacting Ir$^{4+}$ effective spins despite the spin-orbital entanglement in the ground state.
One of the most important properties of topological insulators (TIs) is the helical spin texture of the Dirac surface states, which has been theoretically and experimentally argued to be left-handed helical above the Dirac point and right handed helical below. However, since the spin is not a good quantum number in these strongly spin-orbit coupled systems, this can not be a complete statement, and we must consider the total angular momentum J = L + S that is a contribution of the spin and orbital terms. Using a combination of orbital and spin-resolved angle-resolved photoemission spectroscopy (ARPES), we show a direct link between the different orbital and spin components, with a backwards spin texture directly observed for the in-plane orbital states of Bi2Se3.
In the high spin-orbit coupled Sr2IrO4, the high sensitivity of the ground state to the details of the local lattice structure shows a large potential for the manipulation of the functional properties by inducing local lattice distortions. We use epitaxial strain to modify the Ir-O bond geometry in Sr2IrO4 and perform momentum-dependent Resonant Inelastic X-ray Scattering (RIXS) at the metal and at the ligand sites to unveil the response of the low energy elementary excitations. We observe that the pseudospin-wave dispersion for tensile-strained Sr2IrO4 films displays large softening along the [h,0] direction, while along the [h,h] direction it shows hardening. This evolution reveals a renormalization of the magnetic interactions caused by a strain-driven crossover from anisotropic to isotropic interactions between the magnetic moments. Moreover, we detect dispersive electron-hole pair excitations which shift to lower (higher) energies upon compressive (tensile) strain, manifesting a reduction (increase) in the size of the charge gap. This behavior shows an intimate coupling between charge excitations and lattice distortions in Sr2IrO4, originating from the modified hopping elements between the t2g orbitals. Our work highlights the central role played by the lattice degrees of freedom in determining both the pseudospin and charge excitations of Sr2IrO4 and provides valuable information towards the control of the ground state of complex oxides in the presence of high spin-orbit coupling.
Resonant inelastic x-ray scattering is used to investigate the electronic origin of orbital polarization in nickelate heterostructures taking $mathrm{LaTiO_3-LaNiO_3-3x(LaAlO_3)}$, a system with exceptionally large polarization, as a model system. We find that heterostructuring generates only minor changes in the Ni $3d$ orbital energy levels, contradicting the often-invoked picture in which changes in orbital energy levels generate orbital polarization. Instead, O $K$-edge x-ray absorption spectroscopy demonstrates that orbital polarization is caused by an anisotropic reconstruction of the oxygen ligand hole states. This provides an explanation for the limited success of theoretical predictions based on tuning orbital energy levels and implies that future theories should focus on anisotropic hybridization as the most effective means to drive large changes in electronic structure and realize novel emergent phenomena.
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