Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userA phononic bandgap shield for high-Q membrane microresonators
177
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A phononic crystal can control the acoustic coupling between a resonator and its support structure. We micromachine a phononic bandgap shield for high Q silicon nitride membranes and study the driven displacement spectra of the membranes and their support structures. We find that inside observed bandgaps the density and amplitude of non-membrane modes are greatly suppressed, and membrane modes are shielded from an external mechanical drive by up to 30 dB.
rate research
Read More
We report on optomechanical GaAs disk resonators with ultrahigh quality factor - frequency product Qf. Disks standing on a simple pedestal exhibit GHz breathing modes attaining a Qf of 10^13 measured under vacuum at cryogenic temperature. Clamping losses are found to be the dominant source of dissipation in this configuration. A new type of disk resonator integrating a shield within the pedestal is then proposed and its working principles and performances investigated by numerical simulations. For dimensions compatible with fabrication constraints, the clamping-loss-limited Q reaches 10^7-10^9 corresponding to Qf of 10^16-10^18. This shielded pedestal approach applies to any heterostructure presenting an acoustic mismatch.
We present measurements at millikelvin temperatures of the microwave-frequency acoustic properties of a crystalline silicon nanobeam cavity incorporating a phononic bandgap clamping structure for acoustic confinement. Utilizing pulsed laser light to excite a co-localized optical mode of the nanobeam cavity, we measure the dynamics of cavity acoustic modes with single-phonon sensitivity. Energy ringdown measurements for the fundamental $5$~GHz acoustic mode of the cavity shows an exponential increase in phonon lifetime versus number of periods in the phononic bandgap shield, increasing up to $tau approx 1.5$~seconds. This ultralong lifetime, corresponding to an effective phonon propagation length of several kilometers, is found to be consistent with damping from non-resonant two-level system defects on the surface of the silicon device. Potential applications of these ultra-coherent nanoscale mechanical resonators range from tests of various collapse models of quantum mechanics to miniature quantum memory elements in hybrid superconducting quantum circuits.
We present quantum yield measurements of single layer $textrm{WSe}_2$ (1L-$textrm{WSe}_2$) integrated with high-Q ($Q>10^6$) optical microdisk cavities, using an efficient ($eta>$90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe$_2$ to the evanescent cavity field. This preserves the microresonator high intrinsic quality factor ($Q>10^6$) below the bandgap of 1L-WSe$_2$. The nonlinear excitation power dependence of the cavity quantum yield is in agreement with an exciton-exciton annihilation model. The cavity quantum yield is $textrm{QY}_textrm{c}sim10^{-3}$, consistent with operation in the textit{broad emitter} regime (i.e. the emission lifetime of 1L-WSe$_2$ is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.
Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that is emerging as a powerful platform for quantum optics and nanophotonics. In this work, we demonstrate whispering gallery mode silica microresonators hybridized with thin layers of epitaxially grown hBN that exhibit high optical quality factor $> 7 times 10^5$. Measurements of the effect of hBN thickness on optical $Q$ and comparison with a theoretical model allows the linear optical absorption coefficient of the hBN films to be estimated. These high-$Q$ devices will be useful for applications in quantum and nonlinear optics, and their hybridized geometry provides a sensitive platform for evaluating losses in hBN and other 2D materials.
We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH- etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
