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Register a new userNegative area compressibility in silver(I) tricyanomethanide
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The molecular framework Ag(tcm) (tcm$^-$ = tricyanomethanide) expands continuously in two orthogonal directions under hydrostatic compression. The first of its kind, this negative area compressibility behaviour arises from the flattening of honeycomb-like layers during rapid pressure-driven collapse of the interlayer separation.
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First-principles calculations reveal that sodium boride (NaB3) undergoes a phase transition from a tetragonal P4/mbm phase to an orthorhombic Pbam phase at about 16 GPa, accompanied by counterintuitive lattice expansion along the crystallographic a-axis. This unusual compression behavior is identified as negative linear compressibility (NLC), which is dominantly attributed to the symmetry-breaking of boron framework. Meanwhile, the P4/mbm and Pbam phases form superionic conductors after undergoing a peculiar swap state at high temperature. Specifically, under warm conditions the Na cation pairs exhibit a rare local exchange (or rotation) behavior, which may be originated from the asymmetric energy barriers of different diffusion paths. The study of NaB3 compound sheds new light on a material with the combination of NLC and ion transportation at extreme conditions.
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.
As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices.
We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are able to interpret our measurements quantitatively by accounting for disorder and using the random phase approximation (RPA) for the exchange and correlation energies of both Dirac and parabolic-band two-dimensional electron gases. This interpretation allows us to extract the energetic offset between the conduction band edge of MoS2 and the Dirac point of graphene.
We present temperature dependent inelastic neutron scattering measurments, accompanied byab-initio calculations of phonon spectra and elastic properties as a function of pressure to understand anharmonicity of phonons and to study the mechanism of negative thermal expansion and negative linear compressibility behaviour of ZnAu2(CN)4. The mechanism is identified in terms of specific anharmonic modes that involve bending of the Zn(CN)4-Au- Zn(CN)4 linkage. The high-pressure phase transition at about 2 GPa is also investigated and found to be related to softening of a phonon mode at the L-point at the Brillouin zone boundary and its coupling with a zone-centre phonon and an M-point phonon in the ambient pressure phase. Although the phase transition is primarily driven by a L-point soft phonon mode, which usually leads to a second order transition with a 2 x 2 x 2 supercell, in the present case the structure is close to an elastic instability that leads to a weakly first order transition.
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