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Register a new userInjection locking of a semiconductor laser to a multi-frequency reference beam
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Authors
T. Yang
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Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is done with a single-frequency seeding beam. In this work we show that injection locking may also be achieved in the case of multi-frequency seeding beam when slave laser provides sufficient frequency filtering. One relevant parameter turns out to be the frequency detuning between the free running slave laser and each injected frequency component. Stable selective locking to a set of three components separated of $1.2,$GHz is obtained for (positive) detuning values between zero and $1.5,$GHz depending on seeding power (ranging from 10 to 150 microwatt). This result suggests that, using distinct slave lasers for each line, a set of mutually coherent narrow-linewidth high-power radiation modes can be obtained.
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We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microresonator. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microresonator, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.
We present a new method for accurate mid-infrared frequency measurements and stabilization to a near-infrared ultra-stable frequency reference, transmitted with a long-distance fibre link and continuously monitored against state-of-the-art atomic fountain clocks. As a first application, we measure the frequency of an OsO4 rovibrational molecular line around 10 $mu$m with a state-of-the-art uncertainty of 8x10-13. We also demonstrate the frequency stabilization of a mid-infrared laser with fractional stability better than 4x10-14 at 1 s averaging time and a line-width below 17 Hz. This new stabilization scheme gives us the ability to transfer frequency stability in the range of 10-15 or even better, currently accessible in the near-infrared or in the visible, to mid-infrared lasers in a wide frequency range.
We present a simple and effective method to implement an active stabilization of a diode laser with injection locking, which requires minimal user intervenes. The injection locked state of the diode laser is probed by a photodetector, of which sensitivity is enhanced by a narrow laser-line filter. Taking advantage of the characteristic response of laser power to spectral modes from the narrow laser-line filter, we demonstrate that high spectral purity and low intensity noise of the diode can be simultaneously maintained by an active feedback to the injected laser. Our method is intrinsically cost-effective, and does not require bulky devices, such as Fabry-Perot interferometers or wavemeters, to actively stabilize the diode laser. Based on successful implementation of this method in our quantum gas experiments, it is conceivable that our active stabilization will greatly simplify potential applications of injection locking of diode lasers in modularized or integrated optical systems.
We present homogeneous quantum cascade lasers (QCLs) emitting around 3 THz which display bandwidths up to 950 GHz with a single stable beatnote. Devices are spontaneously operating in a harmonic comb state, and when in a dense mode regime they can be injection locked at the cavity roundtrip frequency with very small RF powers down to -55 dBm. When operated in the electrically unstable region of negative differential resistance, the device displays ultra-broadband operation exceeding 1.83 THz ($Delta f/f=50%$) with high phase noise, exhibiting self-sustained, periodic voltage oscillations. The low CW threshold (115 A$cdot$ cm$^{-2}$) and broadband comb operation ($Delta f/f=25%$) make these sources extremely appealing for on-chip frequency comb applications.
Self-injection locking is a dynamic phenomenon representing stabilization of the emission frequency of an oscillator with a passive cavity enabling frequency filtered coherent feedback to the oscillator cavity. For instance, self-injection locking of a semiconductor laser to a high-quality-factor (high-Q) whispering gallery mode (WGM) microresonator can result in multiple orders of magnitude reduction of the laser linewidth. The phenomenon was broadly studied in experiments, but its detailed theoretical model allowing improving the stabilization performance does not exist. In this paper we develop such a theory. We introduce five parameters identifying efficiency of the self-injection locking in an experiment, comprising back-scattering efficiency, phase delay between the laser and the high-Q cavities, frequency detuning between the laser and the high-Q cavities, the pump coupling efficiency, the optical path length between the laser and the microresonator. Our calculations show that the laser linewidth can be improved by two orders of magnitude compared with the case of not optimal self-injection locking. We present recommendations on the experimental realization of the optimal self-injection locking regime. The theoretical model provides deeper understanding of the self-injection locking and benefits multiple practical applications of self-injection locked oscillators.
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