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Register a new userAnnihilation of low energy antiprotons in silicon
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The goal of the AE$mathrm{bar{g}}$IS experiment at the Antiproton Decelerator (AD) at CERN, is to measure directly the Earths gravitational acceleration on antimatter. To achieve this goal, the AE$mathrm{bar{g}}$IS collaboration will produce a pulsed, cold (100 mK) antihydrogen beam with a velocity of a few 100 m/s and measure the magnitude of the vertical deflection of the beam from a straight path. The final position of the falling antihydrogen will be detected by a position sensitive detector. This detector will consist of an active silicon part, where the annihilations take place, followed by an emulsion part. Together, they allow to achieve 1$%$ precision on the measurement of $bar{g}$ with about 600 reconstructed and time tagged annihilations. We present here, to the best of our knowledge, the first direct measurement of antiproton annihilation in a segmented silicon sensor, the first step towards designing a position sensitive silicon detector for the AE$mathrm{bar{g}}$IS experiment. We also present a first comparison with Monte Carlo simulations (GEANT4) for antiproton energies below 5 MeV
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The in-beam tests of two Si pixel type TRACE detectors have been performed at Laboratori Nazionali di Legnaro (Italy). The aim was to investigate the possibility of identifying heavy-ion reactions products with mass A~10 at low kinetic energy, i.e., around 10 MeV. Two separate read-out chains, digital and analog, were used. The Pulse Shape Analysis technique was employed to obtain the identification matrices for the digitally processed part of the data. Separation in both charge and mass was obtained, however, the $alpha$ particles contaminated significantly the recorded data in the lower energy part. Due to this effect, the identification of the light products ($^{7,6}$Li isotopes) could be possible down only to ~20 MeV
We set up a plane wave impulse approximation (PWIA) formalism for the analysis of the annihilation cross sections of antinucleons on nuclear targets at very low momenta (below 100 MeV/c), where semiclassical approximations cant be applied. Since, as we test here, PWIA fails in reproducing the unexpected ``inversion behavior of the $bar{p}p$ and $bar{p}-$nucleus annihilation cross sections found in a recent experimentcite{obe1,obe2} we discuss some further possibilities, with a special attention to the optical potential model.
Silicon photomultipliers (SiPMs) have a low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier tubes (PMTs) for future dark matter experiments with liquid xenon (LXe). However, SiPMs have nearly two orders of magnitude higher dark count rate (DCR) compared to that of PMTs at the LXe temperature ($sim$ 165 K). This type of high DCR mainly originates from the carriers that are generated by band-to-band tunneling effect. To suppress the tunneling effect, we have developed a new SiPM with lowered electric field strength in cooperation with Hamamatsu Photonics K. K. and characterized its performance in a temperature range of 153 K to 298 K. We demonstrated that the newly developed SiPMs had 6--54 times lower DCR at low temperatures compared to that of the conventional SiPMs.
The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 micron thick and 6 mm^2 in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.
A photon-counting silicon strip detector with two energy thresholds was investigated for spectral X-ray imaging in a mammography system. Preliminary studies already indicate clinical benefit of the detector, and the purpose of the present study is optimization with respect to energy resolution. Factors relevant for the energy response were measured, simulated, or gathered from previous studies, and used as input parameters to a cascaded detector model. Threshold scans over several X-ray spectra were used to calibrate threshold levels to energy, and to validate the model. The energy resolution of the detector assembly was assessed to range over DeltaE/E = 0.12-0.26 in the mammography region. Electronic noise dominated the peak broadening, followed by charge sharing between adjacent detector strips, and a channel-to-channel threshold spread. The energy resolution may be improved substantially if these effects are reduced to a minimum. Anti-coincidence logic mitigated double counting from charge sharing, but erased the energy resolution of all detected events, and optimization of the logic is desirable. Pile-up was found to be of minor importance at typical mammography rates.
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