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Register a new userSpin-orbit torques in Co/Pd multilayer nanowires
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Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 kOe and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (~ 1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.
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Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the damping-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the damping-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures.
The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics. We demonstrate how hybridization of wavefunctions of Co layer and a monolayer of transition metal dichalcogenides (TMDs)---such as semiconducting MoSe$_2$ and WSe$_2$ or metallic TaSe$_2$---can lead to dramatic transmutation of electronic and spin structure of Co within some distance away from its interface with TMD, when compared to the bulk of Co or its surface in contact with vacuum. This is due to proximity induced SO splitting of Co bands encoded in the spectral functions and spin textures on its monolayers, which we obtain using noncollinear density functional theory (ncDFT) combined with equilibrium Green function (GF) calculations. In fact, SO splitting is present due to structural inversion asymmetry of the bilayer even if SO coupling within TMD monolayer is artificially switched off in ncDFT calculations, but switching it on makes the effects associated with proximity SO coupling within Co layer about five times larger. Injecting spin-unpolarized charge current through SO-proximitized monolayers of Co generates nonequilibrium spin density over them, so that its cross product with the magnetization of Co determines SO torque. The SO torque computed via first-principles quantum transport methodology, which combines ncDFT with nonequilibrium GF calculations, can be used as the screening parameter to identify optimal combination of materials and their interfaces for applications in spintronics. In particular, we identify heterostructure two-monolayer-Co/monolayer-WSe$_2$ as the most optimal.
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.
Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of both torques.
We report the enhancement of spin-orbit torques in MnAl/Ta films with improving chemical ordering through annealing. The switching current density is increased due to enhanced saturation magnetization MS and effective anisotropy field HK after annealing. Both damplinglike effective field HD and fieldlike effective field HF have been increased in the temperature range of 50 to 300 K. HD varies inversely with MS in both of the films, while the HF becomes liner dependent on 1/MS in the annealed film. We infer that the improved chemical ordering has enhanced the interfacial spin transparency and the transmitting of the spin current in MnAl layer.
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