Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDerivation of 12- and 14-band $textbf{k}cdottextbf{p}$ Hamiltonians for dilute bismide and bismide-nitride semiconductors
100
0
0.0
(
0
)
Added by
Christopher A. Broderick
Publication date
2013
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Using an $sp^{3}s^{*}$ tight-binding model we demonstrate how the observed strong bowing of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide alloy GaBi$_{x}$As$_{1-x}$ can be described in terms of a band-anticrossing interaction between the extended states of the GaAs valence band edge and highly localised Bi-related resonant states lying below the GaAs valence band edge. We derive a 12-band $textbf{k}cdottextbf{p}$ Hamiltonian to describe the band structure of GaBi$_{x}$As$_{1-x}$ and show that this model is in excellent agreement with full tight-binding calculations of the band structure in the vicinity of the band edges, as well as with experimental measurements of the band gap and spin-orbit-splitting across a large composition range. Based on a tight-binding model of GaBi$_{x}$N$_{y}$As$_{1-x-y}$ we show that to a good approximation N and Bi act independently of one another in disordered GaBi$_{x}$N$_{y}$As$_{1-x-y}$ alloys, indicating that a simple description of the band structure is possible. We present a 14-band $textbf{k}cdottextbf{p}$ Hamiltonian for ordered GaBi$_{x}$N$_{y}$As$_{1-x-y}$ crystals which reproduces accurately the essential features of full tight-binding calculations of the band structure in the vicinity of the band edges. The $textbf{k}cdottextbf{p}$ models we present here are therefore ideally suited to the simulation of the optoelectronic properties of these novel III-V semiconductor alloys.
rate research
Read More
Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of simple models of the electronic structure of these dilute bismide alloys, which can be used to evaluate their potential as a candidate material system for optical applications. Here, we begin by using detailed calculations based on an $sp^{3}s^{*}$ tight-binding model of (In)GaBi$_{x}$As$_{1-x}$ to verify the presence of a valence band-anticrossing interaction in these alloys. Based on the tight-binding model the derivation of a 12-band $textbf{k}cdottextbf{p}$ Hamiltonian for dilute bismide alloys is outlined. We show that the band structure obtained from the 12-band model is in excellent agreement with full tight-binding supercell calculations. Finally, we apply the 12-band model to In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$ and compare the calculated variation of the band gap and spin-orbit-splitting to a variety of spectroscopic measurements performed on a series of MBE-grown In$_{0.53}$Ga$_{0.47}$Bi$_{x}$As$_{1-x}$/InP layers.
We report structural and physical properties of the single crystalline ${mathrm{Ca}}{mathrm{Mn}}_{2}{mathrm{P}}_{2}$. The X-ray diffraction(XRD) results show that ${mathrm{Ca}}{mathrm{Mn}}_{2}{mathrm{P}}_{2}$ adopts the trigonal ${mathrm{Ca}}{mathrm{Al}}_{2}{mathrm{Si}}_{2}$-type structure. Temperature dependent electrical resistivity $rho(T)$ measurements indicate an insulating ground state for ${mathrm{Ca}}{mathrm{Mn}}_{2}{mathrm{P}}_{2}$ with activation energies of 40 meV and 0.64 meV for two distinct regions, respectively. Magnetization measurements show no apparent magnetic phase transition under 400 K. Different from other ${mathrm{A}}{mathrm{Mn}}_{2}{mathrm{Pn}}_{2}$ (A = Ca, Sr, and Ba, and Pn = P, As, and Sb) compounds with the same structure, heat capacity $C_{mathrm{p}}(T)$ and $rho(T)$ reveal that ${mathrm{Ca}}{mathrm{Mn}}_{2}{mathrm{P}}_{2}$ has a first-order transition at $T$ = 69.5 K and the transition temperature shifts to high temperature upon increasing pressure. The emergence of plenty of new Raman modes below the transition, clearly suggests a change in symmetry accompanying the transition. The combination of the structural, transport, thermal and magnetic measurements, points to an unusual origin of the transition.
The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature ferromagnetism in materials containing no valence band holes. It is argued that in these systems spinodal decomposition into regions with a large and a small concentration of magnetic component takes place. This self-organized assembling of magnetic nanocrystals can be controlled by co-doping and growth conditions. Functionalities of these multicomponent systems are described together with prospects for their applications in spintronics, nanoelectronics, photonics, plasmonics, and thermoelectrics.
The relationship between the modern and classical Landaus approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. The computed magnitude of orbital magnetization is in accord with experimental values obtained by x-ray magnetic circular dichroism in (III,Mn)V compounds. The direct effect of the magnetic field on the hole spectrum is studied too, and employed to interpret a dependence of the Coulomb blockade maxima on the magnetic field in a single electron transistor with a (Ga,Mn)As gate.
By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
