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Register a new userOrbital magnetization in dilute ferromagnetic semiconductors
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The relationship between the modern and classical Landaus approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. The computed magnitude of orbital magnetization is in accord with experimental values obtained by x-ray magnetic circular dichroism in (III,Mn)V compounds. The direct effect of the magnetic field on the hole spectrum is studied too, and employed to interpret a dependence of the Coulomb blockade maxima on the magnetic field in a single electron transistor with a (Ga,Mn)As gate.
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A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is presented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4p states to the Mn K edge spectra.
The challenging problem of skew scattering for Hall effects in dilute ferromagnetic alloys, with intertwined effects of spin-orbit coupling, magnetism and impurity scattering, is studied here from first principles. Our main aim is to identify chemical trends and work out simple rules for large skew scattering in terms of the impurity and host states at the Fermi surface, with particular emphasis on the interplay of the spin and anomalous Hall effects in one and the same system. The predicted trends are benchmarked by referring to three different emph{ab initio} methods based on different approximations with respect to the electronic structure and transport properties.
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the magnetic anisotropy (MA) of the ferromagnet by an electric field. However, the voltage-induced MA is too weak to deterministically switch the magnetization without an assisting magnetic field, and the strategy towards this goal remains elusive. Here, we demonstrate a new scheme of orbital-controlled magnetization switching (OCMS): A sharp change in the MA is induced when the Fermi level is moved between energy bands with different orbital symmetries. Using a ferromagnetic oxide interface, we show that OCMS can be used to achieve a deterministic and magnetic-field-free 90 degree-magnetization switching solely by applying an extremely small electric field of 0.05 V/nm with a negligibly small current density of 10^-2 A/cm^2. Our results highlight the huge potential of band engineering in ferromagnetic materials for efficient magnetization control.
Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th cation coordination sphere in zinc-blende GaN. It is shown that for a set of experimentally determined input parameters there are no itinerant carriers and the coupling between localized Mn$^{3+}$ spins in GaN proceeds via superexchange that is ferromagnetic for all explored $R_{ij}$ values. Extensive Monte Carlo simulations serve to evaluate the magnitudes of Curie temperature $T_mathrm{C}$ by the cumulant crossing method. The theoretical values of $T_mathrm{C}(x)$ are in quantitative agreement with the experimental data that are available for Ga$_{1-x}$Mn$_x$N with randomly distributed Mn$^{3+}$ ions with the concentrations $0.01 leq x leq 0.1$.
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