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The dynamics of optical switching in semiconductor microcavities in the strong coupling regime is studied using time- and spatially-resolved spectroscopy. The switching is triggered by polarised short pulses which create spin bullets of high polariton density. The spin packets travel with speeds of the order of 106 m/s due to the ballistic propagation and drift of exciton-polaritons from high to low density areas. The speed is controlled by the angle of incidence of the excitation beams, which changes the polariton group velocity.
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Semiconductor microcavities operating in the polaritonic regime are highly non-linear, high speed systems due to the unique half-light, half-matter nature of polaritons. Here, we report for the first time the observation of propagating multi-soliton polariton patterns consisting of multi-peak structures either along (x) or perpendicular to (y) the direction of propagation. Soliton arrays of up to 5 solitons are observed, with the number of solitons controlled by the size or power of the triggering laser pulse. The break-up along the x direction occurs due to interplay of bistability, negative effective mass and polariton-polariton scattering, while in the y direction the break-up results from nonlinear phase-dependent interactions of propagating fronts. We show the experimental results are in good agreement with numerical modelling. Our observations are a step towards ultrafast all-optical signal processing using sequences of solitons as bits of information.
We investigate the interactions between exciton-polaritons in N two-dimensional semiconductor layers embedded in a planar microcavity. In the limit of low-energy scattering, where we can ignore the composite nature of the excitons, we obtain exact analytical expressions for the spin-triplet and spin-singlet interaction strengths, which go beyond the Born approximation employed in previous calculations. Crucially, we find that the strong light-matter coupling enhances the strength of polariton-polariton interactions compared to that of the exciton-exciton interactions, due to the Rabi coupling and the small photon-exciton mass ratio. We furthermore obtain the dependence of the polariton interactions on the number of layers N, and we highlight the important role played by the optically dark states that exist in multiple layers. In particular, we predict that the singlet interaction strength is stronger than the triplet one for a wide range of parameters in most of the currently used transition metal dichalcogenides. This has consequences for the pursuit of polariton condensation and other interaction-driven phenomena in these materials.
The transmission of a pump laser resonant with the lower polariton branch of a semiconductor microcavity is shown to be highly dependent on the degree of circular polarization of the pump. Spin dependent anisotropy of polariton-polariton interactions allows the internal polarization to be controlled by varying the pump power. The formation of spatial patterns, spin rings with high degree of circular polarization, arising as a result of polarization bistability, is observed. A phenomenological model based on spin dependent Gross-Pitaevskii equations provides a good description of the experimental results. Inclusion of interactions with the incoherent exciton reservoir, which provides spin-independent blueshifts of the polariton modes, is found to be essential.
We consider exciton-photon coupling in semiconductor microcavities in which separate periodic potentials have been embedded for excitons and photons. We show theoretically that this system supports degenerate ground-states appearing at non-zero in-plane momenta, corresponding to multiple valleys in reciprocal space, which are further separated in polarization corresponding to a polarization-valley coupling in the system. Aside forming a basis for valleytronics, the multivalley dispersion is predicted to allow for spontaneous momentum symmetry breaking and two-mode squeezing under non-resonant and resonant excitation, respectively.
The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities the emission consists of two peaks, which exhibit anti-crossing behaviour as a function of detection angle and thus originate from polariton states. With increasing carrier injection we observe a progressive transition from strong to weak coupling due to screening of the exciton resonance by free carriers. The demonstration that polariton emission can be excited by electrical injection is encouraging for future development of polariton lasers.
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