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Register a new userDirac cone with helical spin polarization in ultrathin $alpha$-Sn(001) films
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Authors
Yoshiyuki Ohtsubo
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Spin-split two-dimensional electronic states have been observed on ultrathin Sn(001) films grown on InSb(001) substrates. Angle-resolved photoelectron spectroscopy (ARPES) performed on these films revealed Dirac-cone-like linear dispersion around the $bar{Gamma}$ point of surface Brillouin zone, suggesting nearly massless electrons belonging to 2D surface states. The states disperse across a bandgap between bulk-like quantum well states in the films. Moreover, both circular dichroism of ARPES and spin-resolved ARPES studies show helical spin polarization of the Dirac-cone-like surface states, suggesting a topologically protected character as in a bulk topological insulator (TI). These results indicate that a quasi-3D TI phase can be realized in ultrathin films of zero-gap semiconductors.
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We report on the electronic structure of $alpha$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $alpha$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $alpha$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.
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