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Register a new userFabrication of an InGaAs spin filter by implantation of paramagnetic centers
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We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects.
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Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.
Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching record spin polarizations (100%). Furthermore, the recent observation of the amplification of the spin filtering effect under a Faraday configuration magnetic field has suggested that the hyperfine interaction that couples bound electrons and nuclei permits the optical manipulation of its nuclear spin polarization. Even though the mechanisms behind the nuclear spin polarization in gallium centers are fairly well understood, the origin of nuclear spin relaxation and the formation of an Overhauser-like magnetic field remain elusive. In this work we develop a model based on the master equation approach to describe the evolution of electronic and nuclear spin polarizations of gallium centers interacting with free electrons and holes. Our results are in good agreement with existing experimental observations. In regard to the nuclear spin relaxation, the roles of nuclear dipolar and quadrupolar interactions are discussed. Our findings show that, besides the hyperfine interaction, the spin relaxation mechanisms are key to understand the amplification of the spin filtering effect and the appearance of the Overhauser-like magnetic field. Based on our models results we propose an experimental protocol based on time resolved spectroscopy. It consists of a pump-probe photoluminescence scheme that would allow the detection and the tracing of the electron-nucleus flip-flops through time resolved PL measurements.
The discovery of new materials that efficiently transmit spin currents has been important for spintronics and material science. The electric insulator $mathrm{Gd}_3mathrm{Ga}_5mathrm{O}_{12}$ (GGG) is a superior substrate for growing magnetic films, but has never been considered as a conduit for spin currents. Here we report spin current propagation in paramagnetic GGG over several microns. Surprisingly, the spin transport persists up to temperatures of 100 K $gg$ $T_{mathrm{g}} = 180$ mK, GGGs magnetic glass-like transition temperature. At 5 K we find a spin diffusion length ${lambda_{mathrm{GGG}}} = 1.8 pm 0.2 {mu}$m and a spin conductivity ${sigma}_{mathrm{GGG}} = (7.3 pm 0.3) times10^4$ $mathrm{Sm}^{-1}$ that is larger than that of the record quality magnet $mathrm{Y}_3mathrm{Fe}_5mathrm{O}_{12}$ (YIG). We conclude that exchange coupling is not required for efficient spin transport, which challenges conventional models and provides new material-design strategies for spintronic devices.
We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N$^+$ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and X-ray photoelectron spectroscopy.
Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-Methyl-2-pyrrolidone (NMP) and deoxygenated water is employed as a subphase in Langmuir Blodgett (LB) trough for assembling the nanosheets followed by their deposition on substrates and studied its field effect transistor (FET) characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 10^4 at room temperature in FET devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications.
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