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Register a new userCoherent transport by adiabatic passage on atom chips
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Adiabatic techniques offer some of the most promising tools to achieve high-fidelity control of the centre-of-mass degree of freedom of single atoms. As their main requirement is to follow an eigenstate of the system, constraints on timing and field strength stability are usually low, especially for trapped systems. In this paper we present a detailed example of a technique to adiabatically transport a single atom between different waveguides on an atom chip. To ensure that all conditions are fulfilled, we carry out fully three dimensional simulations of the system, using experimentally realistic parameters. We also detail our method for simulating the system in very reasonable timescales on a consumer desktop machine by leveraging the power of GPU computing.
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Coherent transport by adiabatic passage has recently been suggested as a high-fidelity technique to engineer the centre-of-mass state of single atoms in inhomogenous environments. While the basic theory behind this process is well understood, several conceptual challenges for its experimental observation have still to be addressed. One of these is the difficulty that currently available optical or magnetic micro-trap systems have in adjusting the tunneling rate time-dependently while keeping resonance between the asymptotic trapping states at all times. Here we suggest that both requirements can be fulfilled to a very high degree in an experimentally realistic setup based on radio frequency traps on atom chips. We show that operations with close to 100% fidelity can be achieved and that these systems also allow significant improvements for performing adiabatic passage with interacting atomic clouds.
The limitations for the coherent manipulation of neutral atoms with fabricated solid state devices, so-called `atom chips, are addressed. Specifically, we examine the dominant decoherence mechanism, which is due to the magnetic noise originating from the surface of the atom chip. It is shown that the contribution of fluctuations in the chip wires at the shot noise level is not negligible. We estimate the coherence times and discuss ways to increase them. Our main conclusion is that future advances should allow for coherence times as long as one second, a few micrometers away from the surface.
Imaging ultracold atomic gases close to surfaces is an important tool for the detailed analysis of experiments carried out using atom chips. We describe the critical factors that need be considered, especially when the imaging beam is purposely reflected from the surface. In particular we present methods to measure the atom-surface distance, which is a prerequisite for magnetic field imaging and studies of atom surface-interactions.
We show that the performance and functionality of atom-chips can be transformed by using graphene-based van der Waals heterostructures to overcome present limitations on the lifetime of the trapped atom cloud and on its proximity to the chip surface. Our analysis involves Green-function calculations of the thermal (Johnson) noise and Casimir-Polder atom-surface attraction produced by the atom-chip. This enables us to determine the lifetime limitations produced by spin-flip, tunneling and three-body collisional losses. Compared with atom-chips that use thick metallic conductors and substrates, atom-chip structures based on two-dimensional materials reduce the minimum attainable atom-surface separation to a few 100 nm and increase the lifetimes of the trapped atom clouds by orders of magnitude so that they are limited only by the quality of the background vacuum. We predict that atom-chips with two-dimensional conductors will also reduce spatial fluctuations in the trapping potential originating from imperfections in the conductor patterns. These advantages will enhance the performance of atom-chips for quantum sensing applications and for fundamental studies of complex quantum systems.
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.
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