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Register a new userKondo hybridisation and the origin of metallic states at the (001) surface of SmB6
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Added by
Emmanouil Frantzeskakis
Publication date
2013
fields
Physics
and research's language is
English
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SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridisation gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo hybridisation process is the key to unravelling the origin of the two types of metallic states observed directly by ARPES in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin, and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest lying 5d-4f hybridisation zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raises the bar in terms of the ARPES resolution required, as we show there to be a strong renormalisation of the hybridisation gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent LDA+Gutzwiler calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6, pointing the way for future, ultrahigh resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator.
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We present the structure of the fully relaxed (001) surface of the half-metallic manganite La0.7Sr0.3MnO3, calculated using density functional theory within the generalized gradient approximation (GGA). Two relevant ferroelastic order parameters are identified and characterized: The tilting of the oxygen octahedra, which is present in the bulk phase, oscillates and decreases towards the surface, and an additional ferrodistortive Mn off-centering, triggered by the surface, decays monotonically into the bulk. The narrow d-like energy band that is characteristic of unrelaxed manganite surfaces is shifted down in energy by these structural distortions, retaining its uppermost layer localization. The magnitude of the zero-temperature magnetization is unchanged from its bulk value, but the effective spin-spin interactions are reduced at the surface.
Topological insulators are a class of materials with insulating bulk but protected conducting surfaces due to the combination of spin-orbit interactions and time-reversal symmetry. The surface states are topologically non-trivial and robust against non-magnetic backscattering, leading to interesting physics and potential quantum computing applications1, 2. Recently there has been a fast growing interest in samarium hexboride (SmB6), a Kondo insulator predicted to be the first example of a correlated topological insulator3, 4. Here we fabricated smooth thin films of nanocrystalline SmB6 films. Their transport behavior indeed shows that SmB6 is a bulk insulator with topological surface states. Upon decreasing the temperature, the resistivity r{ho} of Sm0.14B0.86 (SmB6) films display significant increase below 50 K due to hybridization gap formation, and it shows a saturation behavior below 10 K. The saturated resistance of our textured films is similar to that of the single crystals, suggesting that this conduction is from the surface and robust against grain boundary scatterings. Point contact spectroscopy (PCS) of the film using a superconducting tip displays both a Kondo Fano resonance and Andreev reflection, suggesting the existence of both an insulating Kondo lattice and metallic surface states.
The rise of topology in condensed matter physics has generated strong interest in identifying novel quantum materials in which topological protection is driven by electronic correlations. Samarium hexaboride is a Kondo insulator for which it has been proposed that a band inversion between $5d$ and $4f$ bands gives rise to topologically protected surface states. However, unambiguous proof of the existence and topological nature of these surface states is still missing, and its low-energy electronic structure is still not fully established. Here we present a study of samarium hexaboride by ultra-low-temperature scanning tunneling microscopy and spectroscopy. We obtain clear atomically resolved topographic images of the sample surface. Our tunneling spectra reveal signatures of a hybridization gap with a size of about $8 mathrm{meV}$ and with a reduction of the differential conductance inside the gap by almost half, and surprisingly, several strong resonances below the Fermi level. The spatial variations of the energy of the resonances point towards a microscopic variation of the electronic states by the different surface terminations. High-resolution tunneling spectra acquired at $100 mathrm{mK}$ reveal a splitting of the Kondo resonance, possibly due to the crystal electric field.
On the basis of relativistic ab-initio calculations we show that the driving mechanism of simultaneous emergence of parabolic and M-shaped 2D electron gas (2DEG) bands at the surface of layered topological insulators as well as Rashba-splitting of the former states is an expansion of van der Waals (vdW) spacings caused by intercalation of metal atoms or residual gases. The expansion of vdW spacings and emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of interband scattering found experimentally.
We have studied the electronic structure at the heterointerface between the band insulators LaAlO$_3$ and SrTiO$_3$ using $in situ$ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO$_3$ side due to band bending at the metallic LaAlO$_3$/TiO$_2$-SrTiO$_3$ interface. The structure, however, is absent at the insulating LaAlO$_3$/SrO-SrTiO$_3$ interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.
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