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Register a new userSiGe quantum dots for fast hole spin Rabi oscillations
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We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.
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Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over more than 13 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 $pi$ pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.
We show that correlated two-particle backscattering can induce fractional charge oscillations in a quantum dot built at the edge of a two-dimensional topological insulator by means of magnetic barriers. The result nicely complements recent works where the fractional oscillations were obtained employing of semiclassical treatments. Moreover, since by rotating the magnetization of the barriers a fractional charge can be trapped in the dot via the Jackiw-Rebbi mechanism, the system we analyze offers the opportunity to study the interplay between this noninteracting charge fractionalization and the fractionalization due to two-particle backscattering. In this context, we demonstrate that the number of fractional oscillations of the charge density depends on the magnetization angle. Finally, we address the renormalization induced by two-particle backscattering on the spin density, which is characterized by a dominant oscillation, sensitive to the Jackiw-Rebbi charge, with a wavelength twice as large as the charge density oscillations.
Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number of dots used for the single spin control in multiple quantum dots. We observe Rabi oscillations and electron spin resonance (ESR) for each dot and evaluate the spin-electric coupling of the four dots, and finally discuss practical approaches to independently address single spin control in multiple quantum dot systems containing even more quantum dots.
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
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