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We investigate theoretically the slow non-exponential relaxation dynamics of the electron glass out of equilibrium, where a sudden change in carrier density reveals interesting memory effects. The self-consistent model of the dynamics of the occupation numbers in the system successfully recovers the general behavior found in experiments. Our numerical analysis is consistent with both the expected logarithmic relaxation and our understanding of how increasing disorder or interaction slows down the relaxation process, thus yielding a consistent picture of the electron glass. We also present a novel finite size domino effect where the connection to the leads affects the relaxation process of the electron glass in mesoscopic systems. This effect speeds up the relaxation process, and even reverses the expected effect of interaction; stronger interaction then leading to a faster relaxation.
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We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.
A new protocol for an aging experiment is studied in the electron-glass phase of indium-oxide films. In this protocol, the sample is exposed to a non-ohmic electric field F for a waiting time t_{w} during which the system attempts to reach a steady state (rather than relax towards equilibrium). The relaxation of the excess conductance dG after ohmic conditions are restored exhibit simple aging as long as F is not too large.
We study the dependence of the glassy properties of strongly localized indium-oxide films on the sample lateral dimensions. Characteristic mesoscopic effects such as reproducible conductance fluctuations (CF) are readily observable in gated structures for sample size smaller than 100 microns measured at 4K, and the relative amplitude of the CF decreases with the sample volume as does the flicker noise. By contrast, down to sample size of few microns, the non-equilibrium features that are attributed to the electron-glass are indistinguishable from those observed in macroscopic samples, and in particular, the relaxation dynamics is independent of sample size down to 2 microns. In addition, The usual features that characterize the electron-glass including slow-relaxation, memory effects, and full-aging behavior are all observed in the `mesoscopic regime, and they appear to be independent of the conductance fluctuations.
Slow relaxation and aging of the conductance are experimental features of a range of materials, which are collectively known as electron glasses. We report dynamic Monte Carlo simulations of the standard electron glass lattice model. In a non-equilibrium state, the electrons will often form a Fermi distribution with an effective electron temperature higher than the phonon bath temperature. We study the effective temperature as a function of time in three different situations: relaxation after a quench from an initial random state, during driving by an external electric field and during relaxation after such driving. We observe logarithmic relaxation of the effective temperature after a quench from a random initial state as well as after driving the system for some time $t_w$ with a strong electric field. For not too strong electric field and not too long $t_w$ we observe that data for the effective temperature at different waiting times collapse when plotted as functions of $t/t_w$ -- the so-called simple aging. During the driving period we study how the effective temperature is established, separating the contributions from the sites involved in jumps from those that were not involved. It is found that the heating mainly affects the sites involved in jumps, but at strong driving, also the remaining sites are heated.
We introduce an efficient dynamical tree method that enables us, for the first time, to explicitly demonstrate thermo-remanent magnetization memory effect in a hierarchical energy landscape. Our simulation nicely reproduces the nontrivial waiting-time and waiting-temperature dependences in this non-equilibrium phenomenon. We further investigate the condensation effect, in which a small set of micro-states dominates the thermodynamic behavior, in the multi-layer trap model. Importantly, a structural phase transition of the tree is shown to coincide with the onset of condensation phenomenon. Our results underscore the importance of hierarchical structure and demonstrate the intimate relation between glassy behavior and structure of barrier trees.
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