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Register a new userTheoretical Model of Superconducting Spintronic SIsFS Devices
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Motivated by recent progress in development of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where S is a bulk superconductor, s is a thin superconducting film, F is a metallic ferromagnet and I is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current $I_{C}$ and a normal-state resistance $R_{N}$ in the $pi$ state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO${_x}$-Nb-Pd$_{0.99}$Fe$_{0.01}$-Nb junctions.
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Short review on advanced superconducting circuits and devices.
We present the results of theoretical study of Current-Phase Relations (CPR) in Josephson junctions of SIsFS type, where S is a bulk superconductor and IsF is a complex weak link consisting of a superconducting film s, a metallic ferromagnet F and an insulating barrier I. We calculate the relationship between Josephson current and phase difference. At temperatures close to critical, calculations are performed analytically in the frame of the Ginsburg-Landau equations. At low temperatures numerical method is developed to solve selfconsistently the Usadel equations in the structure. We demonstrate that SIsFS junctions have several distinct regimes of supercurrent transport and we examine spatial distributions of the pair potential across the structure in different regimes. We study the crossover between these regimes which is caused by shifting the location of a weak link from the tunnel barrier I to the F-layer. We show that strong deviations of the CPR from sinusoidal shape occur even in a vicinity of Tc, and these deviations are strongest in the crossover regime. We demonstrate the existence of temperature-induced crossover between 0 and pi states in the contact and show that smoothness of this transition strongly depends on the CPR shape.
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We perform first principles band calculation of the newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$, and study the lattice structure and the fluorine doping dependence of the gap between the valence and conduction bands. We find that the distance between La and S as well as the fluorine doping significantly affects the band gap. On the other hand, the four orbital model of the BiS$_2$ layer shows that the lattice structure does not affect this portion of the band. Still, the band gap can affect the carrier concentration in the case of light electron doping, which in turn should affect the transport properties.
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