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First-principles calculations of spin and angle-resolved resonant photoemission spectra of Cr(110) surfaces at the 2$p$ - 3$d$ resonance

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 Added by Fabiana Pieve Da
 Publication date 2013
  fields Physics
and research's language is English




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A first principles approach for spin and angle resolved resonant photoemission is developed within multiple scattering theory and applied to a Cr(110) surface at the 2$p$-3$d$ resonance. The resonant photocurrent from this non ferromagnetic system is found to be strongly spin polarized by circularly polarized light, in agreement with experiments on antiferromagnetic and magnetically disordered systems. By comparing the antiferromagnetic and Pauli-paramagnetic phases of Cr, we explicitly show that the spin polarization of the photocurrent is independent of the existence of local magnetic moments, solving a long-standing debate on the origin of such polarization. New spin polarization effects are predicted for the paramagnetic phase even with unpolarized light, opening new directions for full mapping of spin interactions in macroscopically non magnetic or nanostructured systems.



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The electronic structure of Si(110)16 x 2 double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)16 x 2 reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)16 x 2 and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)16 x 2 and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)16 x 2 surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)16 x 2 surfaces gave small average polarisations of around 1.5% that were opposite in sign. Further measurements at 77 K on A-type Si(110)16 x 2 surface gave a smaller value of +0.3%. An upper limit of $sim1%$ may thus be taken for the longitudinal polarisation.
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A novel method for mapping the local spin and orbital nature of the ground state of a system via corresponding flip excitations in both sectors is proposed based on angle resolved resonant photoemission and related diffraction patterns, presented here for the first time via an ab-initio modified one-step theory of photoemission. The analysis is done on the paradigmatic weak itinerant ferromagnet bcc Fe, whose magnetism, seen as a correlation phenomenon given by the coexistence of localized moments and itinerant electrons, and the non-Fermi liquid behaviour at ambient and extreme conditions both remain unclear. The results offer a real space imaging of local pure spin flip and entangled spin flip-orbital flip excitations (even at energies where spin flip transitions are hidden in quasiparticle peaks) and of chiral, vortex-like wavefronts of excited electrons, depending on the orbital character of the bands and the direction of the local magnetic moment. Such effects, mediated by the hole polarization, make resonant photoemission a promising tool to perform a full tomography of the local magnetic properties of a system with a high sensitivity to localization/correlation, even in itinerant or macroscopically non magnetic systems.
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Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron doping, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.
Numerous angle resolved photoemission spectroscopy (ARPES) studies of a wide class of low-density metallic systems, ranging from doped transition metal oxides to quasi two-dimensional interfaces between insulators, exhibit phonon sidebands below the quasi-particle peak as a unique hallmark of polaronic correlations. Here, we single out properties of ARPES spectra that can provide a robust estimate of the effective range (screening length) of the electron-phonon interaction, regardless of the limited experimental resolution, dimensionality and particular features of the electronic structure, facilitating a general methodology for an analysis of a whole class of materials.
Continuing the photoemission study begun with the work of Opeil et al. [Phys. Rev. B textbf{73}, 165109 (2006)], in this paper we report results of an angle-resolved photoemission spectroscopy (ARPES) study performed on a high-quality single-crystal $alpha$-uranium at 173 K. The absence of surface-reconstruction effects is verified using X-ray Laue and low-energy electron diffraction (LEED) patterns. We compare the ARPES intensity map with first-principles band structure calculations using a generalized gradient approximation (GGA) and we find good correlations with the calculated dispersion of the electronic bands.
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