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Register a new userCrystal nucleation and near-epitaxial growth in nacre
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Nacre is a layered, iridescent lining found inside many mollusk shells, with a unique brick-and-mortar periodic structure at the sub-micron scale, and remarkable resistance to fracture. Despite extensive studies, it remains unclear how nacre forms. Here we present 20-nm, 2{deg}-resolution Polarization-dependent Imaging Contrast (PIC) images of shells from 15 mollusk shell species, mapping nacre tablets and their orientation patterns, showing where new crystal orientations appear and how they propagate across organic sheets as nacre grows. In all shells we found stacks of co-oriented aragonite (CaCO3) tablets arranged into vertical columns or staggered diagonally. Only near the nacre-prismatic boundary are disordered crystals nucleated, as spherulitic aragonite. Overgrowing nacre tablet crystals are most frequently co-oriented with the underlying spherulitic aragonite or with another tablet, connected by mineral bridges. Therefore aragonite crystal growth in nacre is epitaxial or near-epitaxial, with abrupt or gradual changes in orientation, with c-axes within 20{deg}. Based on these data, we propose that there is one mineral bridge per tablet, and that bridge-tilting is a possible mechanism to introduce small, gradual or abrupt changes in the orientation of crystals within a stack of tablets as nacre grows.
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The synthesis of silver nanowires in solution phase is of great interest because of their applicability for fabrication of plasmonic devices. Silver nanowires with diameters of 6.5 nm and length exceeding microns are synthesized in aqueous solution by reduction of silver ions within the nanotubular J-aggregates of an amphiphilic cyanine dye. The time scale of the growth of the nanowires is of the order of hours and days which provides the unique possibility to investigate the nucleation, growth, and dissolution of the nanowires by direct imaging using transmission electron microscopy. It is found that the initial nucleation and formation of seeds of silver nanostructures occurs randomly at the outer surface of the aggregates or within the hollow tube. The growth of the seeds within the inner void of the tubular structures to nanowires indicates transport of silver atoms, ions, or clusters through the bilayer wall of the molecular aggregates. This permeability of the aggregates for silver can be utilized to dissolve the preformed silver wires by oxidative etching using Cl- ions from dissolved NaCl. Although the nanosystem presented here is a conceptual rather simple organic-inorganic hybrid, it exhibits growth and dissolution phenomena not expected for a macroscopic system. These mechanisms are of general importance for both, the growth and the usage of such metal nanowires, e.g. for plasmonic applications.
Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.
The controlled growth of carbon nitride (CN) films with tailored electronic properties and surface area is quite challenging due to the solid-state reaction and the lack of efficient interaction between C-N monomers and substrates. Herein, controlled growth of CN films over robust carbon nanotubes (CNT) fiber fabric is reported, which is obtained by either direct calcination of melamine on their surface, that yields a bulk material, or by its chemical vapor deposition resulting in hybrid films. These materials are effective electrodes consisting of high surface-area CN containing CNT fiber fabrics acting as a scaffold and a highly conducting built-in current collector. The results confirm that CNTs act as nucleation centers for the formation of CN films, forming close contact at the CN/CNT interphase, and resulting in efficient charge transfer upon illumination and enhanced electrochemical surface area.
Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.
Superconductivity was discovered in a Ni0:05TaS2 single crystal. A Ni0:05TaS2 single crystal was successfully grown via the NaCl/KCl flux method. The obtained lattice constant c of Ni0:05TaS2 is 1.1999 nm, which is significantly smaller than that of 2H-TaS2 (1.208 nm). Electrical resistivity and magnetization measurements reveal that the superconductivity transition temperature of Ni0:05TaS2 is enhanced from 0.8 K (2H-TaS2) to 3.9 K. The charge-density-wave transition of the matrix compound 2H-TaS2 is suppressed in Ni0:05TaS2. The success of Ni0:05TaS2 single crystal growth via a NaCl/KCl flux demonstrates that NaCl/KCl flux method will be a feasible method for single crystal growth of the layered transition metal dichalcogenides.
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