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Register a new userGiant saturation magnetization effect in epitaxial Fe16N2 thin films grown on MgO (001) substrate
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Whether {alpha}double prime-Fe16N2 possesses a giant saturation magnetization (Ms) has been a daunting problem among magnetic researchers for almost 40 years, mainly due to the unshakable faith of famous Slater-Pauling (SP) curve and poor consistency on evaluating its Ms. Here we demonstrate that, using epitaxy and mis-fit strain imposed by an underlying substrate, the in-plane lattice constant of Fe16N2 thin films can be fine tuned to create favorable conditions for exceptionally large saturation magnetization. Combined study using polarized neutron reflectometry and X-ray diffraction shows that with increasing strain at the interface the Ms of these film can be changed over a broad range, from ~2.1T (non-high Ms) up to ~3.1T (high Ms). We suggest that the equilibrium in-plane lattice constant of Fe16N2 sits in the vicinity of the spin crossover point, in which a transition between low spin to high spin configuration of Fe sites can be realized with sensitive adjustment of crystal structure.
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Magnetic materials with giant saturation magnetization have been a holy grail for magnetic researchers and condensed matter physicists for decades because of its great scientific and technological impacts. As described by the famous Slater-Pauling curve the material with highest Ms is the Fe65Co35 alloy. This was challenged in 1972 by a report on the compound Fe16N2 with Ms much higher than that of Fe65Co35. Following this claim, there have been enormous efforts to reproduce this result and to understand the magnetism of this compound. However, the reported Ms by different groups cover a broad range, mainly due to the unavailability of directly assessing Ms in Fe16N2. In this article, we report a direct observation of the giant saturation magnetization up to 2500 emu/cm3 using polarized neutron reflectometry (PNR) in epitaxial constrained Fe16N2 thin films prepared using a low-energy and surface-plasma-free sputtering process. The observed giant Ms is corroborated by a previously proposed Cluster + Atom model, the characteristic feature of which, namely, the directional charge transfer is evidenced by polarization-dependent x-ray absorption near edge spectroscopy (XANES).
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
We report a synthesis route to grow iron nitride thin films with giant saturation magnetization (Ms) through an N inter-diffusion process. By post annealing Fe/Fe-N structured films grown on GaAs(001) substrates, nitrogen diffuses from the over-doped amorphous-like Fe-N layer into strained crystalline Fe layer and facilitates the development of metastable Fe16N2 phase. As explored by polarized neutron reflectometry, the depth-dependent Ms profile can be well described by a model with the presence of a giant Ms up to 2360 emu/cm3 at near-substrate interface, corresponding to the strained regions of these annealed films. This is much larger than the currently known limit (Fe65Co35 with Ms sim 1900 emu/cm3). The present synthesis method can be used to develop writer materials for future magnetic recording application.
10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to the relation CFA(001)[110]//MgO(001)[100] epitaxial relation), respectively for CFA films grown on a Si and on a MgO substrate. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta) while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with $T_{a}$. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.3*10^-3 and 1.1*10^-3 for films of 50 nm thickness annealed at 615 {deg}C grown on MgO and on Si, respectively).
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