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Register a new userInfrared photo-response of Fe-shunted Ba-122 thin film microstructures
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We present a study of the response to pulsed infrared radiation of Fe-layer shunted pnictide thin film microstructures. The thin film multilayer consisting of 20 nm thick Fe-buffer, 50 nm thick Ba(Fe,Co)2As2 film and gold protection layer were deposited on heated MgO and MgAl2O4 substrates by pulsed-laser deposition. The multilayers were patterned into 5 to 8 um wide and 5 um long microbridges by electron-beam lithography and ion-milling technique. The microbridges show Tc up to 20 K and a critical current density up to 2.56 MA/cm2 at T = 10 K. The photo-response of Fe-shunted Ba(Fe,Co)2As2 thin film microbridges to infrared radiation was studied in a wide range of incident optical power, operation temperature and bias current. We have found that the electron energy relaxation in studied multilayers is dependent on substrate material and is 1.75 times faster in case of MgAl2O4 characterized by lattice matching to pnictide film in comparison to MgO substrate.
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The temperature dependence of the resistivity of epitaxial Ba(Fe_(1-x)Co_x)2As2 thin films (with nominal doping x = 0.08, 0.10 and 0.15) has been analyzed and compared with analogous measurements on single crystals taken from literature. The rho(T) of thin films looks different from that of single crystals, even when the cobalt content is the same. All rho(T) curves can be fitted by considering an effective two-band model (with holes and electrons bands) in which the electrons are more strongly coupled with the bosons (spin fluctuations) than holes, while the effect of impurities is mainly concentrated in the hole band. Within this model the mediating boson has the same characteristic energy in single crystals and thin films, but the shape of the transport spectral function at low energy has to be very different, leading to a hardening of the electron-boson spectral function in thin films, associated with the strain induced by the substrate.
The high critical temperature superconductor Lanthanum Barium Copper Oxide (La2-xBaxCuO4 or LBCO) exhibits a strong anomaly in critical temperature at 1/8th doping, nematicity, and other interesting properties. We report here Scanning Superconducting Quantum Interference Device (SQUID) imaging of the magnetic fields and susceptibility in a number of thin film LBCO samples with doping in the vicinity of the 1/8th anomaly. Spatially resolved measurements of the critical temperatures of these samples do not show a pronounced depression at 1/8th doping. They do, however, exhibit strong, nearly linear modulations of the susceptibility (straie) of multiple samples with surprisingly long periods of 1-4 microns. Counterintuitively, vortices trap in positions of largest diamagnetic susceptibility in these striae. Given the rich interplay of different orders in this material system and its known sensitivity to epitaxial strain, we propose phase separation as a possible origin of these features and discuss scenarios in which that might arise.
We studied the doping and temperature (T) dependence of the infrared (IR) response of Ba(Fe1-xCox)2As2 single crystals. We show that a weak band around 1000 cm-1, that was previously interpreted in terms of interaction of the charge carriers with magnetic excitations or of a pseudogap, is rather related to low-energy interband transitions. Specifically, we show that this band exhibits a similar doping and T-dependence as the hole pockets seen by angle resolved photoemission spectroscopy (ARPES). Notably, we find that it vanishes as a function of doping near the critical point where superconductivity is suppressed in the overdoped regime. Our IR data thus provide bulk specific information (complementary to the surface sensitive ARPES) for a Lifshitz transition. Our IR data also reveal a second low-energy band around 2300 cm-1 which further emphasizes the necessity to consider the multiband nature of these iron arsenides in the analysis of the optical response.
High-temperature superconducting YBa2Cu3O7-d (YBCO) thin-film detectors with improved responsivities were developed for fast time-domain measurements in the THz frequency range. YBCO thin films of 30 nm thickness were patterned to micro- and nanobridges and embedded into planar log-spiral THz antennas. The YBCO thin-film detectors were characterized with continuous wave radiation at 0.65 THz. Responsivity values as high as 710 V/W were found for the YBCO nanobridges. Pulsed measurements in the THz frequency range were performed at the electron storage ring ANKA from the Karlsruhe Institute of Technology (KIT). Due to the high responsivities of the nanobridges no biasing was required for the detection of the coherent synchrotron radiation pulses achieving very good agreement between the measured pulse shapes and simulations.
We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high $I_cR_n$-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional superconductor electrodes lead and niobium, respectively. By tuning the barrier thickness we were able to change the junctions behavior from a Josephson junction to tunnel-like behavior applicable for quasi-particle spectroscopy. Subsequently, we transferred the technology to junctions using Co-doped BaFe$_2$As$_2$ thin films prepared by pulsed laser deposition as base electrode and evaporated Pb as counter electrode. For barriers with a thickness of 1.5,nm we observe clear Josephson effects with $I_cR_n$,$approx$,90,$mu$V at 4.2,K. These junctions behave SNS-like and are dominated by Andreev reflection transport mechanism. For junctions with barrier thickness of 2.0,nm and higher no Josephson but SIS- or SINS-like behavior with a tunnel-like conductance spectrum was observed.
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