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Register a new userSub-mu m Josephson Junctions for Superconducting Quantum Devices
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Added by
Johannes Maximilian Meckbach
Publication date
2012
fields
Physics
and research's language is
English
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For high-performance superconducting quantum devices based on Josephson junctions (JJs) decreasing lateral sizes is of great importance. Fabrication of sub-mu m JJs is challenging due to non-flat surfaces with step heights of up to several 100 nm generated during the fabrication process. We have refined a fabrication process with significantly decreased film thicknesses, resulting in almost flat surfaces at intermediate steps during the JJ definition. In combination with a mix-&-match process, combining electron-beam lithography (EBL) and conventional photolithography, we can fabricate JJs with lateral dimensions down to 0.023 mu m^2. We propose this refined process as an alternative to the commonly used chemical-mechanical polishing (CMP) procedure. We present transport measurements of JJs at 4.2 K that yield critical-current densities in the range from 50 to 10^4 A/cm^2. Our JJ process yields excellent quality parameters, Rsg/Rn up to ~50 and Vgap up to 2.81 mV, and also allows the fabrication of high-quality sub-mu m wide long JJs (LJJs) for the study of Josephson vortex behavior. The developed technique can also be used for similar multilayer processes and is very promising for fabricating sub-mu m JJs for quantum devices such as SQUIDs, qubits and SIS mixers.
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We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) via process yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.
We study the spectrum of Andreev bound states and Josephson currents across a junction of $N$ superconducting wires which may have $s$- or $p$-wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For $N ge 3$, it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three $s$- or three $p$-wave superconductors, we provide analytic expressions for the Andreev bound state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of $4e^2/h$, where $e$ is the electron charge and $h = 2pi hbar$ is Plancks constant. For a sinusoidal current with frequency $omega$ applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage $langle V_1 rangle$ across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of $2e langle V_1 rangle/(hbar omega)$. We also use our formalism to study junctions of two $p$- and one $s$-wave wires. We find that the corresponding Andreev bound state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external applied voltage across the junction. We discuss experiments which may test our theory.
We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SISFS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SISFS junctions fall into two distinct classes based on the thickness of S layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SISFS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SISFS structure with thin superconducting S-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SISFS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The spectral density decreases linearly with temperature between 150 K and 1 K and saturates below 0.8 K. At 4.2 K, the spectral density is about two orders of magnitude lower than expected from a recent survey [D. J. Van Harlingen et al., Phys. Rev. B 70, 064510 (2004)]. Due to the saturation below 0.8 K the estimated qubit dephasing times at 100 mK are only about two times longer than calculated by Van Harlingen et al.
The superconducting-insulator transition is simulated in disordered networks of Josephson junctions with thermally activated Arrhenius-like resistive shunt. By solving the conductance matrix of the network, the transition is reproduced in different experimental conditions by tuning thickness, charge density and disorder degree. In particular, on increasing fluctuations of the parameters entering the Josephson coupling and the Coulomb energy of the junctions, the transition occurs for decreasing values of the critical temperature Tc and increasing values of the activation temperature To. The results of the simulation compare well with recent experiments where the mesoscopic fluctuations of the phase have been suggested as the mechanism underlying the phenomenon of emergent granularity in otherwise homogeneous films. The proposed approach is compared with the results obtained on TiN films and nanopatterned arrays of weak-links, where the superconductor-insulator transition is directly stimulated.
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