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Register a new userBipolar Magnetic Semiconductors: A New Class of Spintronics Materials
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Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.
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Ordered double perovskite oxides of the general formula, A2BBO6, have been known for several decades to have interesting electronic and magnetic properties. However, a recent report of a spectacular negative magnetoresistance effect in a specific member of this family, namely Sr2FeMoO6, has brought this class of compounds under intense scrutiny. It is now believed that the origin of magnetism in this class of compounds is based on a novel kinetically-driven mechanism. This new mechanism is also likely to be responsible for the unusually high temperature ferromagnetism in several other systems, such as dilute magnetic semiconductors, as well as in various half-metallic ferromagnetic systems, such as Heussler alloys.
Skyrmions, topologically protected vortex-like nanometric spin textures in magnets, have been attracting increasing attention for emergent electromagnetic responses and possible technological applications for spintronics. In particular, metallic magnets with chiral and cubic/tetragonal crystal structure may have high potential to host skyrmions that can be driven by low electrical current excitation. However, experimental observations of skyrmions have so far been limited to below room temperature for the metallic chiral magnets, specifically for the MnSi-type B20 compounds. Toward technological applications, it is crucial to transcend this limitation. Here we demonstrate the formation of skyrmions with unique spin helicity both at and above room temperature in a family of cubic chiral magnets: beta-Mn-type Co-Zn-Mn alloys with a different chiral space group from that of B20 compounds. Lorentz transmission electron microscopy (LTEM), magnetization, and small angle neutron scattering (SANS) measurements unambiguously reveal the formation of a skyrmion crystal under the application of magnetic field (H<~1 kOe) in both thin- plate (thickness<150 nm) and bulk forms.
It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity.
We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $mu_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 mu_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.
The abundance of semiconductors in our smartphones, computers, fiber optic junctions, cars, light sources, photovoltaic and thermoelectric cells results from the possibilities of controlling their properties through doping, lighting, and applying various fields. This paper, a part of the volume celebrating 100 years of the Polish Physical Society, presents a biased selection of worthwhile results obtained by researchers at the Institute of Physics, Polish Academy of Sciences relevant, as seen today, to topological matter and spintronics. Comprehensive studies, combining materials development, experimental investigations, and theoretical description of narrow-gap and dilute-magnetic semiconductors have been especially significant in this context. This survey also emphasizes, in an autobiographical tone, a half of a century of the authors intellectual emotions accompanying the rise of ideas and quantitative theories, allowing identifying the physics behind ongoing and future observations.
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