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Register a new userLinear Magnetoelectric Effect by Orbital Magnetism
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We use symmetry analysis and first principles calculations to show that the linear magnetoelectric effect can originate from the response of orbital magnetic moments to the polar distortions induced by an applied electric field. Using LiFePO4 as a model compound we show that spin-orbit coupling partially lifts the quenching of the 3d orbitals and causes small orbital magnetic moments ($mu_{(L)}approx 0.3 mu_B$) parallel to the spins of the Fe$^{2+}$ ions. An applied electric field $mathbf{E}$ modifies the size of these orbital magnetic moments inducing a net magnetization linear in $mathbf{E}$.
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In this article the mechanism of the linear magnetoelectric (ME) effect in the rhombohedral multiferroic BiFeO$_3$ is considered. The study is based on the symmetry approach of the GinzburgLandau type, in which polarization, antiferrodistortion, and antiferromagnetic momentum vectors are viewed as ordering parameters. We demonstrate that the linear ME effect in BFO is caused by reorientation of the antiferrodistortion vector in either electric or magnetic field. The numerical estimations, which show quantitative agreement with the results of the recent measurements in film samples, have been performed. A possibility of significant enhancement of the magnetoelectric effect by applying an external static electric field has been investigated. The considered approach is promising for explaining the high values of the ME effect in composite films and heterostructures with BFO.
The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital current in OHE to the spin current via the spin-orbit coupling from the contact. Furthermore, we find that OHE can induce large nonreciprocal magnetoresistance when employing magnetic contact. Both the generated spin current and the orbital Hall magnetoresistance can be applied to probe the OHE in experiments and design orbitronic devices.
We report the discovery of linear magnetoelectric effect in the well-known green phase compound, Sm2BaCuO5, which crystallizes in the centrosymmetric orthorhombic (Pnma) structure. Magnetization and specific heat measurements reveal the long-range antiferromagnetic ordering of Cu2+ and Sm3+-ions moments at TN1 = 23 K and TN2 = 5 K, respectively. Applied magnetic field induces dielectric anomaly at TN1 whose magnitude increases with field, which results in significant (1.7%) magnetocapacitance effect. On the other hand, the dielectric anomaly observed in zero-applied magnetic field at TN2 shows a small (0.4%) magnetocapacitance effect. Interestingly, applied magnetic field induces an electric polarization below TN1 and the polarization varies linearly up to the maximum applied field of 9 T with the magnetoelectric coefficient {alpha} ~ 4.4 ps/m, demonstrating high magnetoelectric coupling. Below TN2, the electric polarization decreases from 35 to 29 {mu}C/m2 at 2 K and 9 T due to ordering of Sm-sublattice. The observed linear magnetoelectricity in Sm2BaCuO5 is explained using symmetry analysis.
We derive a quantum-mechanical formula of the orbital magnetic quadrupole moment (MQM) in periodic systems by using the gauge-covariant gradient expansion. This formula is valid for insulators and metals at zero and finite temperature. We also prove a direct relation between the MQM and magnetoelectric (ME) susceptibility for insulators at zero temperature. It indicates that the MQM is a microscopic origin of the ME effect. Using the formula, we quantitatively estimate these quantities for room-temperature antiferromagnetic semiconductors BaMn$_2$As$_2$ and CeMn$_2$Ge$_{2 - x}$Si$_x$. We find that the orbital contribution to the ME susceptibility is comparable with or even dominant over the spin contribution.
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic effect, our mechanism relies on virtual interband transitions between the valence and conduction bands and therefore immune to disorder or impurity scattering. By calculating electric field-induced magnetization by the linear response theory, we reveal that the magnetoelectric effect shows up without specific parameter choices. The magnetoelectric effect qualitatively varies by changing the direction of the magnetic moment in the ferromagnet: the response is diagonal for the out-of-plane moment, whereas it is off-diagonal for the inplane moment. We also find out that in optical frequencies, the magnetoelectric signal can be drastically enhanced via interband resonant excitations. Finally, we estimate the magnitude of the magnetoelectric effect for a hybrid halide perovskite semiconductor as an example of the band insulator and compare it with other magnetoelectric materials. We underscore that our mechanism is quite general and widely expectable, only requiring the Rashba spin-orbit coupling and exchange coupling. Our result could potentially offer a promising method of Joule heating-free electric manipulation of magnetic moments in spintronic devices.
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