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Register a new userEnhanced thermoelectric properties by Ir doping of PtSb2 with pyrite structure
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The effects of Ir doping on the thermoelectric properties of Pt1-xIrxSb2 (x = 0, 0.01, 0.03, and 0.1) with pyrite structure were studied. Measurements of electrical resistivity rho, Seebeck coefficient S, and thermal conductivity kappa were conducted. The results showed an abrupt change from semiconducting behavior without Ir (x = 0) to metallic behavior at x = 0.01. The sample with x = 0.01 exhibited large S and low rho, resulting in a maximum power factor (S^2/rho) of 43 muW/cmK^2 at 400 K. The peculiar pudding mold-type electronic band dispersion could explain the enhanced thermoelectric properties in the metallic state.
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Thermoelectric properties of the system La$_2$NiO$_{4+delta}$ have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of an increase in the conductivity. This system, due to its layered structure would be a suitable candidate for an improvement of its thermoelectric figure of merit by nanostructurization in thin films, that has already been shown to increase the electrical conductivity ($sigma$). Our calculations show that in the region around La$_2$NiO$_{4.05}$ the system has a large thermopower at high temperatures and also a substantially increased $sigma$. Films grown with this low-doping concentration will show an optimal relationship between thermopower and $sigma$. This result is obtained for various exchange-correlation schemes (correlated, uncorrelated and parameter-free) that we use to analyze the electronic structure of the hole-doped compound.
Doping of the band insulator FeS$_2$ with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the $0le xle 0.085$ range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small number of our samples. All of these quantities show systematic variation with $x$ including a paramagnetic to disordered ferromagnetic transition at $x=0.007pm 0.002$. A detailed analysis of the changes with temperature and magnetic field reveal small power law dependencies at low temperatures for samples near the critical concentration for magnetism, and just above the Curie temperature at higher $x$. In addition, the magnetic susceptibility and specific heat are non-analytic around H=0 displaying an extraordinarily sharp field dependence in this same temperature range. We interpret this behavior as due to the formation of Griffiths phases that result from the quenched disorder inherent in a doped semiconductor.
The resistivity and thermopower of Na$_{1+x}$Co$_2$O$_4$ and Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$ are measured and analyzed. In Na$_{1+x}$Co$_2$O$_4$, whereas the resistivity increases with $x$, the thermopower is nearly independent of $x$. This suggests that the excess Na is unlikely to supply carriers, and decreases effective conduction paths in the sample. In Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$, the resistivity and the thermopower increase with $x$, and the Ca$^{2+}$ substitution for Na$^+$ reduces the majority carriers in NaCo$_2$O$_4$. This means that they are holes, which is consistent with the positive sign of the thermopower. Strong correlation in this compound is evidenced by the peculiar temperature dependence of the resistivity.
The electrical, thermal conductivity and Seebeck coefficient of the quenched, annealed and slowly cooled phases of the layer compound CuCrS2 have been reported between 15K to 300K. We also confirm the antiferromagnetic transition at 40K in them by our magnetic measurements between 2K and 300K. The crystal flakes show a minimum around 100K in their in-plane resistance behavior. For the polycrystalline pellets the resistivity depends on their flaky texture and it attains at most 10 to 20 times of the room temperature value at the lowest temperature of measurement. The temperature dependence is complex and no definite activation energy of electronic conduction can be discerned. We find that the Seebeck coefficient is between 200-450 microV/K and is unusually large for the observed resistivity values of between 5-100 mOhm-cm at room temperature. The figure of merit ZT for the thermoelectric application is 2.3 for our quenched phases, which is much larger than 1 for useful materials. The thermal conductivity K is mostly due to lattice conduction and is reduced by the disorder in Cu- occupancy in our quenched phase. A dramatic reduction of electrical and thermal conductivity is found as the antiferromagnetic transition is approached from the paramagnetic region, and K subsequently rises in the ordered phase. We discuss the transport properties as being similar to a doped Kondo-insulator.
Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $kappa$. Here we studied the influence of different chemical substitutions at Fe and Sb site on thermal conductivity and thermoelectric effect in high quality single crystals. At $5%$ of Te doping at Sb site thermal conductivity is suppressed from $sim 250$ W/Km in undoped sample to about 8 W/Km. However, Cr and Co doping at Fe site suppresses thermal conductivity more slowly than Te doping, and even at 20$%$ Cr/Co doping the thermal conductivity remains $sim 30$ W/Km. The analysis of different contributions to phonon scattering indicates that the giant suppression of $kappa$ with Te is due to the enhanced point defect scattering originating from the strain field fluctuations. In contrast, Te-doping has small influence on the correlation effects and then for small Te substitution the large magnitude of the Seebeck coefficient is still preserved, leading to the enhanced thermoelectric figure of merit ($ZTsim 0.05$ at $sim 100$ K) in Fe(Sb$_{0.9}$Te$_{0.1}$)$_2$.
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