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Register a new userPhase Transition of the Uniaxial Disordered Ferroelectric Sr$_{0.61}$Ba$_{0.39}$Nb$_2$O$_6$
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Severian Gvasaliya Dr
Publication date
2012
fields
Physics
and research's language is
English
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We report a neutron scattering study of a ferroelectric phase transition in Sr$_{0.61}$Ba$_{0.39}$Nb$_2$O$_6$ (SBN-61). The ferroelectric polarization is along the crystallographic $c$-axis but the transverse acoustic branch propagating along the $<$1, 1, 0$>$ direction does not show any anomaly associated with the this transition. We find no evidence for a soft transverse optic phonon. We do, however, observe elastic diffuse scattering. The intensity of this scattering increases as the sample is cooled from a temperature well above the phase transition. The susceptibility associated with this diffuse scattering follows well the anomaly of the dielectric permittivity of SBN-61. Below T$_mathrm{c}$ the shape of this scattering is consistent with the scattering expected from ferroelectric domain walls. Our results suggest that despite apparent chemical disorder SBN-61 behaves as a classic order-disorder uniaxial ferroelectric with critical fluctuations in the range $<10^{-11}$ s.
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Neutron pair distribution function analysis and first principles calculations have been employed to study short-range correlations in heavily disordered dielectric material Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$ ($x=0.35, 0.5$ and 0.61). The combination of methods has been fruitful in pinpointing main local-structure features, their temperature behaviour and interrelation. A rather complex system of tilts is found to be both temperature and Sr-content sensitive with the biggest tilt magnitudes reached at low temperatures and high $x$. Relative Nb-O$_6$ displacements, directly responsible for materials ferroelectric properties, are shown to be distinct in two octahedra sub-systems with different freezing temperatures and disparate levels of deviation from macroscopic polarization direction. Intrinsic disorder caused by Sr, Ba and vacancy distribution is found to introduce local strain to the structure and directly influence octahedra tilting. These findings establish a new atomistic picture of the local structure -- property relationship in Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$.
Single crystals of the three-dimensional frustrated magnet and spin liquid candidate compound PbCuTe$_2$O$_6$, were grown using both the Travelling Solvent Floating Zone (TSFZ) and the Top-Seeded Solution Growth (TSSG) techniques. The growth conditions were optimized by investigating the thermal properties. The quality of the crystals was checked by polarized optical microscopy, X-ray Laue and X-ray powder diffraction, and compared to the polycrystalline samples. Excellent quality crystals were obtained by the TSSG method. Magnetic measurements of these crystals revealed a small anisotropy for different crystallographic directions in comparison with the previously reported data. The heat capacity of both single crystal and powder samples reveal a transition anomaly around 1~K. Curiously the position and magnitude of the transition are strongly dependent on the crystallite size and it is almost entirely absent for the smallest crystallites. A structural transition is suggested which accompanies the reported ferroelectric transition, and a scenario whereby it becomes energetically unfavourable in small crystallites is proposed.
The charged domain walls in ferroelectric materials exhibit intriguing physical properties. We examine herein the charged-domain-wall structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ using transmission electron microscopy. When viewed along the [001] axis, the wavy charged domain walls are observed over a wide range ($>$5 $mu$m). In contrast, short charged-domain-wall fragments (from 10 to 200 nm long) occur because they are intercepted and truncated by the conventional 180$^{deg}$ domain walls. These results reveal the unusual charged domain structures in Ca$_{3-x}$Sr$_x$Ti$_2$O$_7$ and will be useful for understanding their formation process.
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy measurements up to 20 GPa. Detailed analysis of the frequencies, intensities, and linewidths of the Raman peaks reveals four discontinuities in the spectra around 2, 10, 13 and 17 GPa. At ~2 GPa, we observe a structural transition initiated by the diffusion of IPS domains, which culminates in a drastic reduction of the number of peaks around 10 GPa. We attribute this to a possible monoclinic-trigonal phase transition at 10 GPa. At higher pressures (~ 13 GPa), significant increases in peak intensities and sharpening of the Raman peaks suggest a bandgap-lowering and an isostructural electronic transition, with a possible onset of metallization at pressures above 17 GPa. When the pressure is released, the structure again phase-separates into two distinct chemical domains within the same single crystalline framework -- however, these domains are much smaller in size than the as-synthesized material resulting in suppression of ferroelectricity through nanoconfinement. Hydrostatic pressure can thus be used to tune the electronic and ferrielectric properties of Cu-deficient layered CuInP$_2$S$_6$.
We discover that, in the layered semiconductor Bi$_2$O$_2$Se, an incipient ferroelectric transition endows the material a surprisingly large dielectric permittivity, providing it with a robust protection against mobility degradation by extrinsic Coulomb scattering. Based on state-of-the-art first-principles calculations, we show that the low-temperature electron mobility of Bi$_2$O$_2$Se, taking into account both electron-phonon and ionized impurity scattering, can reach an unprecedented level of $10^5$ to $10^7$ cm$^2$V$^{-1}$s$^{-1}$ over a wide range of realistic doping levels. Moreover, a small elastic strain of 1.7% can drive Bi$_2$O$_2$Se toward the ferroelectric phase transition, which further induces a giant increase in the permittivity, enabling the strain-tuning of carrier mobility by orders of magnitude. These results open a new avenue for the discovery of high-mobility layered semiconductors via phase and dielectric engineering.
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