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We compare tunneling density of states (TDOS) into two ultrathin Ag films, one uniform and one granular, for different degrees of disorder. The uniform film shows a crossover from Altshuler-Aronov (AA) zero bias anomaly to Efros Shklovskii (ES) like Coulomb gap as the disorder is increased. The granular film, on the other hand, exhibits AA behavior even deeply in the insulating regime. We analyze the data and find that granularity introduces a new regime for the TDOS. While the conductivity is dominated by hopping between clusters of grains and is thus insulating, the TDOS probes the properties of an individual cluster which is metallic.
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We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.
Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.
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We study the effect of strong correlations on the zero bias anomaly (ZBA) in disordered interacting systems. We focus on the two-dimensional extended Anderson-Hubbard model, which has both on-site and nearest-neighbor interactions on a square lattice. We use a variation of dynamical mean field theory in which the diagonal self-energy is solved self-consistently at each site on the lattice for each realization of the randomly-distributed disorder potential. Since the ZBA occurs in systems with both strong disorder and strong interactions, we use a simplified atomic-limit approximation for the diagonal inelastic self-energy that becomes exact in the large-disorder limit. The off-diagonal self-energy is treated within the Hartree-Fock approximation. The validity of these approximations is discussed in detail. We find that strong correlations have a significant effect on the ZBA at half filling, and enhance the Coulomb gap when the interaction is finite-ranged.
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