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Register a new userAir cooling for Vertex Detectors
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Arantza Oyanguren
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The vertex detectors are crucial detectors for future linear e+e- colliders since they must give the most accurate location of any outgoing charged particles originating from the interaction point. The DEPFET collaboration is developing a new type of pixel sensors which provide very low noise and high spatial resolution. In order to precisely determine the track and vertex positions, multiple scattering in the detector has to be reduced by minimizing the material in the sensors, cooling, and support structures. A new method of cooling by blowing air over the sensors has been developed and tested. It is applied in the design and construction of the Belle-II detector and may be used in the new generation of vertex detectors for linear colliders.
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We discuss two projects exploring the integration of thin CMOS pixel sensors in order to prototype ladders matching the geometry needed for the ILD vertex detector. The PLUME project has designed and fabricated full-size and fully functional double- sided layers which currently reach 0.6 % X0 and aim for 0.3 % X0 in mid-2012. Another approach, SERNWIETE, consists in wrapping the sensors in a polyimide-based micro-cable to obtain a supportless single-sided ladder with a material budget around 0.15 % X0. First promising samples have been produced and the full-size prototype is expected in spring 2012.
The extreme radiation dose received by vertex detectors at the Large Hadron Collider dictates stringent requirements on their cooling systems. To be robust against radiation damage, sensors should be maintained below -20 degree C and at the same time, the considerable heat load generated in the readout chips and the sensors must be removed. Evaporative CO2 cooling using microchannels etched in a silicon plane in thermal contact with the readout chips is an attractive option. In this paper, we present the first results of microchannel prototypes with circulating, two-phase CO2 and compare them to simulations. We also discuss a practical design of upgraded VELO detector for the LHCb experiment employing this approach.
The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.
In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6 $mu$m. The measured charge collection characterstics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current-voltage characteristics of the device, and have been further used to make predictions about future device designs.
Significant progress has been made to develop silicon pixel technologies for use in the vertex and tracker regions of the proposed Compact Linear Collider (CLIC) detector design. The electron-positron collisions generated by this linear accelerator provide a clean, low-radiation environment for the inner detectors. However, physics-driven performance targets, the CLIC beam structure, and occupancies from beam-induced backgrounds place challenging requirements on detector technologies for this region. A pixel pitch down to 25 x 25$mu$m$^{-2}$, material budget $leq$ 0.2-2$%X_0$ per layer, average power dissipation of down to 50mWcm$^{-2}$, position resolution of 3-7$mu$m, and timing resolution as low as 5ns are called for in the vertex and tracking detectors. To this aim, a comprehensive R&D programme is ongoing to design and test silicon pixel detectors to fulfil these specifications, including both monolithic and hybrid devices. These studies involve Allpix$^2$ Monte Carlo and TCAD simulations, advanced 65nm ASIC and sensor design, laboratory testing, and beam tests of individual modules to determine the required performance parameters. The characterisation and simulation modelling of these devices has also lead to the development of a set of tools and software within the CLIC detector and physics (CLICdp) collaboration. This publication will present recent results from the technologies being developed and tested in view of the CLIC vertex and tracking detector requirements, such as various monolithic CMOS sensors, and fine pitch hybrid assemblies with planar sensors.
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