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Register a new userExchange-correlation potentials for inhomogeneous electron systems in two dimensions from exact diagonalization: comparison with the local-spin-density approximation
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We consider electronic exchange and correlation effects in density-functional calculations of two-dimensional systems. Starting from wave function calculations of total energies and electron densities of inhomogeneous model systems, we derive corresponding exchange-correlation potentials and energies. We compare these with predictions of the local-spin-density approximation and discuss its accuracy. Our data will be useful as reference data in testing, comparing and parametrizing exchange and correlation functionals for two-dimensional electronic systems.
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We present a general numerical approach to construct local Kohn-Sham potentials from orbital-dependent functionals within the all-electron full-potential linearized augmented-plane-wave (FLAPW) method, in which core and valence electrons are treated on an equal footing. As a practical example, we present a treatment of the orbital-dependent exact-exchange (EXX) energy and potential. A formulation in terms of a mixed product basis, which is constructed from products of LAPW basis functions, enables a solution of the optimized-effective-potential (OEP) equation with standard numerical algebraic tools and without shape approximations for the resulting potential. We find that the mixed product and LAPW basis sets must be properly balanced to obtain smooth and converged EXX potentials without spurious oscillations. The construction and convergence of the exchange potential is analyzed in detail for diamond. Our all-electron results for C, Si, SiC, Ge, GaAs semiconductors as well as Ne and Ar noble-gas solids are in very favorable agreement with plane-wave pseudopotential calculations. This confirms the adequacy of the pseudopotential approximation in the context of the EXX-OEP formalism and clarifies a previous contradiction between FLAPW and pseudopotential results.
The dynamical exchange-correlation kernel $f_{xc}$ of a non-uniform electron gas is an essential input for the time-dependent density functional theory of electronic systems. The long-wavelength behavior of this kernel is known to be of the form $f_{xc}= alpha/q^2$ where $q$ is the wave vector and $alpha$ is a frequency-dependent coefficient. We show that in the limit of weak non-uniformity the coefficient $alpha$ has a simple and exact expression in terms of the ground-state density and the frequency-dependent kernel of a {it uniform} electron gas at the average density. We present an approximate evaluation of this expression for Si and discuss its implications for the theory of excitonic effects.
In a previous paper we suggested that a macroscopic force field applied across a two-dimensional electron gas channel could induce a microscopic charge density wave as soon as the proper compressibility becomes negative, which happens at densities much higher than the critical density for the Wigner crystal transition. The suggestion was based on a calculation of the ground state energy in the local density approximation. In this paper we refine our calculation of the energy by including a self-consistent gradient correction to the kinetic energy. Due to the increased energy cost of rapid density variations, we find a much lower critical density for the onset of the charge density wave. This critical density coincides with the result of a linear stability analysis of the uniform ground state in the absence of the electric field.
A new class of orbital-dependent exchange-correlation (xc) potentials for applications in noncollinear spin-density-functional theory is developed. Starting from the optimized effective potential (OEP) formalism for the exact exchange potential - generalized to the noncollinear case - correlation effects are added via a self-consistent procedure inspired by the Singwi-Tosi-Land-Sjolander (STLS) method. The orbital-dependent xc potentials are applied to the Hubbard dimer in uniform and noncollinear magnetic fields and compared to exact diagonalization and to the Bethe-ansatz local spin-density approximation. The STLS gives the overall best performance for total energies, densities and magnetizations, particularly in the weakly to moderately correlated regime.
Small-wavevector excitations in Coulomb-interacting systems can be decomposed into the high-energy collective longitudinal plasmon and the low-energy single-electron excitations. At the critical wavevector and corresponding frequency where the plasmon branch merges with the single-electron excitation region, the collective energy of the plasmon dissipates into single electron-hole excitations. The jellium model provides a reasonable description of the electron-energy-loss spectrum (EELS) of metals close to the free-electron limit. The random phase approximation (RPA) is exact in the high-density limit but can capture the plasmonic dispersion reasonably even for densities with rs > 1. RPA and all beyond-RPA methods investigated here, result in a wrong infinite plasmon lifetime for a wavevector smaller than the critical one where the plasmon dispersion curve runs into particle-hole excitations. Exchange-correlation kernel corrections to RPA modify the plasmon dispersion curve. There is however a large difference in the construction and form of the kernels investigated earlier. Our current work introduces recent model exchange-only and exchange-correlation kernels and discusses the relevance of some exact constraints in the construction of the kernel. We show that, because the plasmon dispersion samples a range of wavevectors smaller than the range sampled by the correlation energy, different kernels can make a strong difference for the correlation energy and a weak difference for the plasmon dispersion. This work completes our understanding about the plasmon dispersion in realistic metals, such as Cs, where a negative plasmon dispersion has been observed. We find only positive plasmon dispersion in jellium at the density for Cs.
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