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Register a new userPhotoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
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We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
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Systems of photonic crystal cavities coupled to quantum dots are a promising architecture for quantum networking and quantum simulators. The ability to independently tune the frequencies of laterally separated quantum dots is a crucial component of such a scheme. Here, we demonstrate independent tuning of laterally separated quantum dots in photonic crystal cavities coupled by in-plane waveguides by implanting lines of protons which serve to electrically isolate different sections of a diode structure.
We describe the design, fabrication, and spectroscopy of coupled, high Quality (Q) factor silicon nanobeam photonic crystal cavities. We show that the single nanobeam cavity modes are coupled into even and odd superposition modes, and we simulate the frequency and Q factor as a function of nanobeam spacing, demonstrating that a differential wavelength shift of 70 nm between the two modes is possible while maintaining Q factors greater than 10^6. For both on-substrate and free-standing nanobeams, we experimentally monitor the response of the even mode as the gap is varied, and measure Q factors as high as 200,000.
The development of solid-state photonic quantum technologies is of great interest for fundamental studies of light-matter interactions and quantum information science. Diamond has turned out to be an attractive material for integrated quantum information processing due to the extraordinary properties of its colour centres enabling e.g. bright single photon emission and spin quantum bits. To control emitted photons and to interconnect distant quantum bits, micro-cavities directly fabricated in the diamond material are desired. However, the production of photonic devices in high-quality diamond has been a challenge so far. Here we present a method to fabricate one- and two-dimensional photonic crystal micro-cavities in single-crystal diamond, yielding quality factors up to 700. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy centres and measure an intensity enhancement by a factor of 2.8. The controlled coupling to small mode volume photonic crystal cavities paves the way to larger scale photonic quantum devices based on single-crystal diamond.
e study theoretically, the photoluminescence properties of a single quantum dot in a microcavity under incoherent excitation. We propose a microscopic quantum statistical approach providing a Lindblad (thus completely positive) description of pumping and decay mechanisms of the quantum dot and of the cavity mode. Our analytical results show that strong coupling (SC) and linewidths are largely independent on the pumping intensity (until saturation effects come into play), in contrast to previous theoretical findings. We shall show the reliable predicting character of our theoretical framework in the analysis of various recent experiments.
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3 . Photoluminescence from the cavity modes is observed in the visible wavelength range 600-820 nm. Studies of the lossy characteristics of the cavities are conducted at varying temperatures and pump powers. Free carrier absorption effects are found to be significant at pump powers as low as a few hundred nanowatts.
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