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Register a new userModeling and simulation of ion energy distribution functions in technological plasmas
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Authors
Thomas Mussenbrock
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The highly advanced treatment of surfaces as etching and deposition is mainly enabled by the extraordinary properties of technological plasmas. The primary factors that influence these processes are the flux and the energy of various species, particularly ions, that impinge the substrate surface. These features can be theoretically described using the ion energy distribution function (IEDF). The article is intended to summarize the fundamental concepts of modeling and simulation of IEDFs from simplified models to self-consistent plasma simulations. Finally, concepts for controlling the IEDF are discussed.
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We propose a method to generate a single peak at a distinct energy in the ion flux-energy distribution function (IDF) at the electrode surfaces in capacitively coupled plasmas. The technique is based on the tailoring of the driving voltage waveform, i.e. adjusting the phases and amplitudes of the applied harmonics, to optimize the accumulation of ions created by charge exchange collisions and their subsequent acceleration by the sheath electric field. The position of the peak (i.e. the ion energy) and the flux of the ions within the peak of the IDF can be controlled in a wide domain by tuning the parameters of the applied RF voltage waveform, allowing optimization of various applications where surface reactions are induced at particular ion energies.
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