Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userUnderstanding interface effects in perovskite thin films
105
0
0.0
(
0
)
Added by
Marie-Bernadette Lepetit
Publication date
2011
fields
Physics
and research's language is
English
Authors
Marie-Bernadette Lepetit
Ask ChatGPT about the research
No Arabic abstract
The control of matter properties (transport, magnetic, dielectric,...) using synthesis as thin films is strongly hindered by the lack of reliable theories, able to guide the design of new systems, through the understanding of the interface effects and of the way the substrate constraints are imposed to the material. The present paper analyses the energetic contributions at the interfaces, and proposes a model describing the microscopic mechanisms governing the interactions at an epitaxial interface between a manganite and another transition metal oxide in perovskite structure (as for instance $rm SrTiO_3$). The model is checked against experimental results and literature analysis.
rate research
Read More
5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm in the thin-film community. Here, we reviewed the scientific accomplishments in Pv-SrIrO3 thin films, a popular candidate for observing non-trivial topological phenomena. Although the predicted topological phenomena are unknown, the Pv-SrIrO3 thin film shows many emergent properties due to the delicate interplay between its various degrees of freedom. These observations provide new physical insight and encourage further research on the design of new 5d-based heterostructures or superlattices for the observation of the hidden topological quantum phenomena in strong spin-orbit coupled oxides.
We have investigated the electronic and magnetic properties of perovskite SrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat (001) SrTiO3 substrates. SrRuO3 has the properties of a ferromagnetic metal with Curie temperature 150 K. Substituting Ir for Ru in SrRuO3, films showed fully-metallic behavior and ferromagnetic ordering, although resistivity increased and the ferromagnetic TC decreased. Films with x = 0.25 underwent the metal-to-insulator transition at 75 K, and spin-glass-like ordering at 45 K with the elimination of ferromagnetic long-range ordering caused by the electron localization at the substitution sites. In ferromagnetic films, resistivity increased near-linearly with T, but in paramagnetic film (x = 0.25) resistivity increased as T3/2. Moreover, observed spin-glass-like (TSG) ordering with the negative magnetoresistance in film with x = 0.25; validates the hypothesis that (Anderson) localization favors glassy ordering at amply disorder limit. These observations provide a promising approach for future applications and of fundamental interest in 4d and 5d mixed perovskites.
We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (SrTiO3 (001), (LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K on LaAlO3) in resistivity. Resistivity in the metallic region follows a T3/2 power law; whereas insulating nature at low T is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO3 (001) shows negative MR upto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 and positive MR proportional to B2; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO3 (001) in the localized regime, validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.
High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.
Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sublinear temperature dependent non-Fermi liquid behaviors in resistivity, the insulating film grown at a higher temperature stands out for its inhomogeneous Ir distribution, as analyzed by secondary ion mass spectrometry. This observation demonstrates that the inhomogeneous distribution of cations can be one of the fundamental factors in affecting the electronic transport in heavy element based oxide films and heterostructures.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
