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Register a new userAnomalous Hall effect in NiPt thin films
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We study Hall effect in sputtered NixPt1-x thin films with different Ni concentrations. Temperature, magnetic field and angular dependencies are analyzed and the phase diagram of NiPt thin films is obtained. It is found that films with sub-critical Ni concentration exhibit cluster-glass behavior at low temperatures with a perpendicular magnetic anisotropy below the freezing temperature. Films with over-critical Ni concentration are ferromagnetic with parallel anisotropy. At the critical concentration the state of the film is strongly frustrated. Such films demonstrate canted magnetization with the easy axis rotating as a function of temperature. The magnetism appears via consecutive paramagnetic - cluster glass - ferromagnetic transitions, rather than a single second-order phase transition. But most remarkably, the extraordinary Hall effect changes sign at the critical concentration. We suggest that this is associated with a reconstruction of the electronic structure of the alloy at the normal metal - ferromagnet quantum phase transition.
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Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic D0$_{22}$ phase. The Hall resistivity $varrho_{xy}$ was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.
A central theme in condensed matter physics is to create and understand the exotic states of matter by incorporating magnetism into topological materials. One prime example is the quantum anomalous Hall (QAH) state. Recently, MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator and the QAH effect was observed in exfoliated MnBi2Te4 flakes. Here, we used molecular beam epitaxy (MBE) to grow MnBi2Te4 films with thickness down to 1 septuple layer (SL) and performed thickness-dependent transport measurements. We observed a non-square hysteresis loop in the antiferromagnetic state for films with thickness greater than 2 SL. The hysteresis loop can be separated into two AH components. Through careful analysis, we demonstrated that one AH component with the larger coercive field is from the dominant MnBi2Te4 phase, while the other AH component with the smaller coercive field is from the minor Mn-doped Bi2Te3 phase in the samples. The extracted AH component of the MnBi2Te4 phase shows a clear even-odd layer-dependent behavior, a signature of antiferromagnetic thin films. Our studies reveal insights on how to optimize the MBE growth conditions to improve the quality of MnBi2Te4 films, in which the QAH and other exotic states are predicted.
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn$_3$Sn thin films is investigated by polarization-resolved spectroscopy. Large anomalous Hall conductivity Re $sigma_{xy} (omega) sim$ 20 $rm{Omega^{-1} cm^{-1}}$ at THz frequencies is clearly observed as polarization rotation. In contrast, Im $sigma_{xy} (omega)$ is small up to a few THz, showing that the AHE remains dissipationless over a large frequency range. A peculiar temperature dependence corresponding to the breaking/recovery of symmetry in the spin texture is also discussed. Observation of the THz AHE at room temperature demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn$_3$Sn and will also open new avenue for studying nonequilibrium dynamics in Weyl antiferromagnets.
We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.
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