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Register a new userAngular dependent magnetization reversal in exchange biased bilayers under a modified effective field model
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A modified effective field model was developed to quantitatively interpret the angular dependent magnetization reversal processes in exchange biased Fe/IrMn bilayers. Several kinds of multi-step loops with distinct magnetization reversal routes were observed for the samples measured at various field orientations. Two types of angular dependent switching fields are observed and their transitions are investigated, which are found to be driven by both Fe and IrMn layer thicknesses. Our modified effective field model can nicely describe all the switching field behaviors including the critical effects of the exchange bias induced uniaxial anisotropy on the magnetization reversal processes.
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In this study, the magnetic reversal process of exchange-coupled bilayer systems, consisting of a ferrimagnetic TbFeCo alloy layer and a ferromagnetic [Co/Ni/Pt]N multilayer, was investigated. In particular, minor loop studies, probing solely the reversal characteristics of the softer ferromagnetic layer, reveal two distinct reversal mechanisms, which depend strongly on the thickness of the ferromagnetic layer. For thick layers, irreversible switching of the macroscopic minor loop is observed. The underlying microscopic origin of this reversal process was studied in detail by high-resolution magnetic force microscopy, showing that the reversal is triggered by in-plane domain walls propagating through the ferromagnetic layer. In contrast, thin ferromagnetic layers show a hysteresis-free reversal, which is nucleation-dominated due to grain-to-grain variations in magnetic anisotropy of the Co/Ni/Pt multilayer and an inhomogeneous exchange coupling with the magnetically hard TbFeCo layer, as confirmed by micromagnetic simulations.
Exchange-coupled structures consisting of ferromagnetic and ferrimagnetic layers become technologically more and more important. We show experimentally the occurrence of completely reversible, hysteresis-free minor loops of [Co(0.2 nm)/Ni(0.4 nm)/Pt(0.6 nm)]$_N$ multilayers exchange-coupled to a 20 nm thick ferrimagnetic Tb$_{28}$Co$_{14}$Fe$_{58}$ layer, acting as hard magnetic pinning layer. Furthermore, we present detailed theoretical investigations by means of micromagnetic simulations and most important a purely analytical derivation for the condition of the occurrence of full reversibility in magnetization reversal. Hysteresis-free loops always occur if a domain wall is formed during the reversal of the ferromagnetic layer and generates an intrinsic hard-axis bias field that overcomes the magnetic anisotropy field of the ferromagnetic layer. The derived condition further reveals that the magnetic anisotropy and the bulk exchange of both layers, as well as the exchange coupling strength and the thickness of the ferromagnetic layer play an important role for its reversibility.
Ensemble-averaged exchange bias in arrays of Fe/FeF2 nanodots has been deconvoluted into local, microscopic, bias separately experienced by nanodots going through different reversal modes. The relative fraction of dots in each mode can be modified by exchange bias. Single domain dots exhibit a simple loop shift, while vortex state dots have asymmetric shifts in the vortex nucleation and annihilation fields, manifesting local incomplete domain walls in these nanodots as magnetic vortices with tilted cores.
Using an atomistic spin model, we have simulated spin wave injection and propagation into antiferromagnetic IrMn from an exchange coupled CoFe layer. The spectral characteristics of the exited spin waves have a complex beating behavior arising from the non-collinear nature of the antiferromagnetic order. We find that the frequency response of the system depends strongly on the strength and frequency of oscillating field excitations. We also find that the strength of excited spin waves strongly decays away from the interfacial layer with a frequency dependent attenuation. Our findings suggest that spin waves generated by coupled ferromagnets are too weak to reverse IrMn in their entirety even with resonant excitation of a coupled ferromagnet. However, efficient spin wave injection into the antiferromagnet is possible due to the non-collinear nature of the IrMn spin ordering.
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
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