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Register a new userAb-initio calculation of the Gilbert damping parameter via linear response formalism
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A Kubo-Greenwood-like equation for the Gilbert damping parameter $alpha$ is presented that is based on the linear response formalism. Its implementation using the fully relativistic Korringa-Kohn-Rostoker (KKR) band structure method in combination with Coherent Potential Approximation (CPA) alloy theory allows it to be applied to a wide range of situations. This is demonstrated with results obtained for the bcc alloy system Fe$_x$Co$_{1-x}$ as well as for a series of alloys of permalloy with 5d transition metals. To account for the thermal displacements of atoms as a scattering mechanism, an alloy-analogy model is introduced. The corresponding calculations for Ni correctly describe the rapid change of $alpha$ when small amounts of substitutional Cu are introduced.
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A method for the calculations of the Gilbert damping parameter $alpha$ is presented, which based on the linear response formalism, has been implemented within the fully relativistic Korringa-Kohn-Rostoker band structure method in combination with the coherent potential approximation alloy theory. To account for thermal displacements of atoms as a scattering mechanism, an alloy-analogy model is introduced. This allows the determination of $alpha$ for various types of materials, such as elemental magnetic systems and ordered magnetic compounds at finite temperature, as well as for disordered magnetic alloys at $T = 0$ K and above. The effects of spin-orbit coupling, chemical and temperature induced structural disorder are analyzed. Calculations have been performed for the 3$d$ transition-metals bcc Fe, hcp Co, and fcc Ni, their binary alloys bcc Fe$_{1-x}$Co$_{x}$, fcc Ni$_{1-x}$Fe$_x$, fcc Ni$_{1-x}$Co$_x$ and bcc Fe$_{1-x}$V$_{x}$, and for 5d impurities in transition-metal alloys. All results are in satisfying agreement with experiment.
We present an ab initio theory of the Gilbert damping in substitutionally disordered ferromagnetic alloys. The theory rests on introduced nonlocal torques which replace traditional local torque operators in the well-known torque-correlation formula and which can be formulated within the atomic-sphere approximation. The formalism is sketched in a simple tight-binding model and worked out in detail in the relativistic tight-binding linear muffin-tin orbital (TB-LMTO) method and the coherent potential approximation (CPA). The resulting nonlocal torques are represented by nonrandom, non-site-diagonal and spin-independent matrices, which simplifies the configuration averaging. The CPA-vertex corrections play a crucial role for the internal consistency of the theory and for its exact equivalence to other first-principles approaches based on the random local torques. This equivalence is also illustrated by the calculated Gilbert damping parameters for binary NiFe and FeCo random alloys, for pure iron with a model atomic-level disorder, and for stoichiometric FePt alloys with a varying degree of L10 atomic long-range order.
Several research groups have recently reported {em ab initio} calculations of the melting properties of metals based on density functional theory, but there have been unexpectedly large disagreements between results obtained by different approaches. We analyze the relations between the two main approaches, based on calculation of the free energies of solid and liquid and on direct simulation of the two coexisting phases. Although both approaches rely on the use of classical reference systems consisting of parameterized empirical interaction models, we point out that in the free energy approach the final results are independent of the reference system, whereas in the current form of the coexistence approach they depend on it. We present a scheme for correcting the predictions of the coexistence approach for differences between the reference and {em ab initio} systems. To illustrate the practical operation of the scheme, we present calculations of the high-pressure melting properties of iron using the corrected coexistence approach, which agree closely with earlier results from the free energy approach. A quantitative assessment is also given of finite-size errors, which we show can be reduced to a negligible size.
We develop a theoretical and computational framework to study polarons in semiconductors and insulators from first principles. Our approach provides the formation energy, excitation energy, and wavefunction of both electron and hole polarons, and takes into account the coupling of the electron or hole to all phonons. An important feature of the present method is that it does not require supercell calculations, and relies exclusively on electron band structures, phonon dispersions, and electron-phonon matrix elements obtained from calculations in the crystal unit cell. Starting from the Kohn-Sham (KS) equations of density-functional theory, we formulate the polaron problem as a variational minimization, and we obtain a nonlinear eigenvalue problem in the basis of KS states and phonon eigenmodes. In our formalism the electronic component of the polaron is expressed as a coherent superposition of KS states, in close analogy with the solution of the Bethe-Salpeter equation for the calculation of excitons. We demonstrate the power of the methodology by studying polarons in LiF and Li2O2. We show that our method describes both small and large polarons, and seamlessly captures Frohlich-type polar electron-phonon coupling and non-Frohlich coupling to acoustic and optical phonons. To analyze in quantitative terms the electron-phonon coupling mechanisms leading to the formation of polarons, we introduce spectral decompositions similar to the Eliashberg spectral function. We validate our theory using both analytical results and direct calculations on large supercells. This study constitutes a first step toward complete ab initio many-body calculations of polarons in real materials.
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[sim 100 (hbar/e)(Omega cm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the $ac$ spin Hall conductivity in the semiconductors is large in pure as well as doped semiconductors.
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